Kubovic Michal | Department Of Electron Devices And Circuits University Of Ulm
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概要
関連著者
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Kubovic Michal
Department Of Electron Devices And Circuits University Of Ulm
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KOHN Erhard
Department of Electron Devices and Circuits , University of Ulm
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Kubovic M
Univ. Ulm Ulm Deu
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Kubovic Michal
Department of Electron Devices and Circuits , University of Ulm
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嘉数 誠
Ntt物性科学基礎研究所
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嘉数 誠
日本電信電話(株)NTT物性科学基礎研究所
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嘉数 誠
日本電信電話株式会社ntt物性科学基礎研究所
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牧本 俊樹
Ntt物性基礎研
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ALEKSOV Aleksandar
Department of Electron Devices and Circuits , University of Ulm
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牧本 俊樹
日本電信電話株式会社NTT物性科学基礎研究所
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Kohn E
Univ. Ulm Ulm Deu
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山内 喜晴
日本電信電話株式会社 NTT物性科学基礎研究所
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牧本 俊樹
日本電信電話株式会社 NTT物性科学基礎研究所
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牧本 俊樹
日本電信電話(株)NTT物性科学基礎研究所
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Sauer Rolf
Department Of Semiconductor Physics University Of Ulm
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Teofilov Nikolai
Department Of Semiconductor Physics University Of Ulm
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小林 直樹
日本電信電話株式会社 Nttサイバースペース研究所
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小林 直樹
日本電信電話株式会社ntt物性科学基礎研究所
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MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
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Kasu Makoto
Ntt Basic Research Laboratories Ntt Corporation
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Kasu Makoto
Ntt Basic Research Laboratories
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小林 直樹
日本電信電話(株)ntt物性科学基礎研究所
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KALLFASS Ingmar
Department of Electron Devices and Circuits , University of Ulm
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SCHUMACHER Hermann
Department of Electron Devices and Circuits , University of Ulm
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Kohn Erhard
Department Of Electron Devices And Circuits University Of Ulm
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TEOFILOV Nikolai
Department of Semiconductor Physics, University of Ulm
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SAUER Rolf
Department of Semiconductor Physics, University of Ulm
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Kallfass Ingmar
Department Of Electron Devices And Circuits University Of Ulm
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Schumacher Hermann
Department Of Electron Devices And Circuits University Of Ulm
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Aleksov Aleksandar
Department Of Electron Devices And Circuits University Of Ulm
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Sauer Rolf
Department of Semiconductor Physics, University of Ulm, Albert-Einstein Allee 45, D-89069 Ulm, Germany
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Kohn Erhard
Department of Electron Devices and Circuits, University of Ulm, Albert-Einstein Allee 45, D-89081 Ulm, Germany
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Teofilov Nikolai
Department of Semiconductor Physics, University of Ulm, Albert-Einstein Allee 45, D-89069 Ulm, Germany
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Makimoto Toshiki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi 243-0198, Japan
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Kubovic Michal
Department of Electron Devices and Circuits, University of Ulm, Albert-Einstein Allee 45, D-89081 Ulm, Germany
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Aleksov Aleksandar
Department of Electron Devices and Circuits, University of Ulm, Albert-Einstein Allee 45, D-89081 Ulm, Germany
著作論文
- ダイヤモンドMESFETの高周波特性
- Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
- ダイヤモンドMESFETのマイクロ波帯増幅特性(化合物混晶半導体デバイス・材料(含むSiGe,ワイドギャップ半導体),一般)
- ダイヤモンドMESFETのマイクロ波帯増幅特性(化合物混晶半導体デバイス・材料(含むSiGe,ワイドギャップ半導体),一般)
- ダイヤモンドMESFETのマイクロ波帯増幅特性(化合物混晶半導体デバイス・材料(含むSiGe,ワイドギャップ半導体),一般)
- Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor