Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
スポンサーリンク
概要
著者
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Kasu Makoto
Ntt Basic Research Laboratories
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Taniyasu Yoshitaka
Ntt Basic Research Laboratories Ntt Corporation
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Hirama Kazuyuki
Ntt Basic Research Laboratories Ntt Corporation
関連論文
- Nucleus and Spiral Growth Mechanisms of GaN Studied by Using Selective-Area Metalorganic Vapor Phase Epitaxy
- Multi-Atomic Steps on Metalorganic Chemical Vapor Deposition-Grown GaAs Vicinal Surfaces Studied by Atomic Force Microscopy
- RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
- Scanning Tunneling Microscopy Study of GaAs Step Structures on Vicirual Substrate Grown by Metalorganic Chemical Vapor Deposition
- Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy
- Formation of Solid Solution of Al_Si_xN (0
- Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
- Low-dislocation AlGaN thin films grown using Al_Si_xN nano-disks (x=0.07-0.17)
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- High-Temperature Characteristics of AlxGa1-xN-Based Vertical Conducting Diodes
- Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
- RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit
- Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Enhancement and Stabilization of Hole Concentration of Hydrogen-Terminated Diamond Surface Using Ozone Adsorbates
- High Temperature Operation of Boron-Implanted Diamond Field-Effect Transistors
- Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al_2O_3 Overlayer and its Electric Properties
- Diamond Field-Effect Transistors with 1.3A/mm Drain Current Density by AlO Passivation Layer (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
- Arsenic-Doped n-Type Diamond Grown by Microwave-Assisted Plasma Chemical Vapor Deposition
- Hexagonal AlN(0001) Heteroepitaxial Growth on Cubic Diamond (001)
- Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface
- Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice
- Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Origin of Schottky Barrier Modification by Hydrogen on Diamond