Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
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概要
- 論文の詳細を見る
Thick p-InGaN layers were grown on GaN by metalorganic vapor phase epitaxy to investigate the strain inside p-InGaN using a reciprocal space map of X-ray diffraction intensity. It was found that a large part of p-InGaN grows coherently on the GaN buffer layer, even though it is much thicker than the calculated critical thickness. This result means that few dislocations are generated at the InGaN/GaN interface. Using this strained thick p-InGaN as a base, a GaN/InGaN heterojunction bipolar transistor was fabricated on a sapphire substrate. Its maximum current gain was as high as 1000 and its offset voltage as low as 0.2 V, which matches that calculated from the conduction-band discontinuity between the n-GaN emitter and the p-InGaN base.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Kasu Makoto
Ntt Basic Research Laboratories
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KIDO Takatoshi
Shonan Institute of Technology
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MATSUMOTO Nobuo
Shonan Institute of Technology
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Taniyasu Yoshitaka
Ntt Basic Research Laboratories Ntt Corporation
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Kumakura Kazuhide
Ntt Basic Laboratories Ntt Corporation
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Yamauchi Yoshiharu
Ntt Basic Research Laboratories
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Yamauchi Yoshiharu
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Taniyasu Yoshitaka
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Matsumoto Nobuo
Shonan Institute of Technology, 1-1-25 Nishi-Kaigan Tsujido, Fujisawa, Kanagawa 251-8511, Japan
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Kasu Makoto
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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