Silicon Whisker Growth Using Hot Filament Reactor with Hydrogen as Source Gas
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概要
- 論文の詳細を見る
Si whisker growth on a silicon substrate, using only pure hydrogen gas flow in a hot filament chemical vapor deposition reactor, has been studied by scanning and transmission electron microscopy. At the initial stage of the growth, tungsten–silicide particles are formed due to hydrogen radical etching by the filament. Simultanously the Si substrate exhibits a surface texturing. After long residence times of hydrogen gas in the reactor, silicon whiskers, with diameters between 10 and 50 nm, were observed on the textured silicon surface. Each whisker has a silicide particle at its tip. A mechanism of silicon whiskers growth using this method with hydrogen gas is proposed.
- 2008-06-25
著者
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MATSUMOTO Nobuo
Shonan Institute of Technology
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TERASHIMA Kazutaka
Shonan Institute of Technology
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Holmestad Randi
Department Of Physics Norwegian University Of Science And Technology
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Walmsley John
Sintef Materials And Chemistry
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Terashima Kazutaka
Shonan Institute of Technology, 1-1-25 Nishikaigan, Tsujido, Fujisawa, Kanagawa 251-8511, Japan
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Nagayoshi Hiroshi
Tokyo National College of Technology, 1220-2 Kunugida-machi, Hachioji, Tokyo 193-8610, Japan
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Nordmark Heidi
Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
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Nishimura Suzuka
Shonan Institute of Technology, 1-1-25 Nishikaigan, Tsujido, Fujisawa, Kanagawa 251-8511, Japan
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Ulyashin Alexander
Institute for Energy Technology, P.O.Box 40, NO-2027 Kjeller, Norway
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Matsumoto Nobuo
Shonan Institute of Technology, 1-1-25 Nishikaigan, Tsujido, Fujisawa, Kanagawa 251-8511, Japan
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Walmsley John
SINTEF Materials and Chemistry, NO-7465 Trondheim, Norway
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Holmestad Randi
Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
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