TERASHIMA Kazutaka | Shonan Institute of Technology
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概要
関連著者
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TERASHIMA Kazutaka
Shonan Institute of Technology
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Huang X
Nanjing Univ. Nanjing Chn
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HUANG Xinming
Faculty of Education, Shinshu University
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HOSHIKAWA Keigo
Faculty of Education, Shinshu University
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Hoshikawa Keigo
Faculty Of Education Shinshu University
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Huang Xinming
Faculty Of Education Shinshu University
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SAKAI Susumu
Department of Materials Science and Chemical Engineering, Shizuoka University
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Sakai S
Tokushima Univ. Tokushima Jpn
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Sakai S
Electrotechnical Lab. Ibaraki
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SAITOU Keijirou
Faculty of Education, Shinshu University
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Saitou Keijirou
Faculty Of Education Shinshu University
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Nishimura Suzuka
Shonan Institute of Technology, 1-1-25 Nishikaigan, Tsujido, Fujisawa, Kanagawa 251-8511, Japan
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Matsumoto Satoru
Department of Cardiology, Toyonaka Municipal Hospital
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Nakanishi Hideo
Toshiba Ceramics Co. Ltd.r&d Center
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MATSUMOTO Nobuo
Shonan Institute of Technology
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SANPEI Keiko
Nanwa Quarts Inc.
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Holmestad Randi
Department Of Physics Norwegian University Of Science And Technology
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Nakazawa Tatsuo
Nagano National College of Technology
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Walmsley John
Sintef Materials And Chemistry
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NAKAZATO Kenichi
Shonan Institute of Technology
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Terashima Kazutaka
Shonan Institute of Technology, 1-1-25 Nishikaigan, Tsujido, Fujisawa, Kanagawa 251-8511, Japan
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Nagayoshi Hiroshi
Tokyo National College of Technology, 1220-2 Kunugida-machi, Hachioji, Tokyo 193-8610, Japan
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Nordmark Heidi
Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
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Ulyashin Alexander
Institute for Energy Technology, P.O.Box 40, NO-2027 Kjeller, Norway
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Sakai Susumu
Department of Materials Science and Chemical Engineering, Shizuoka University,
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Saitou Keijirou
Faculty of Education, Shinshu University, Nishinagano, Nagano 380, Japan
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NAKANISHI Hideo
Toshiba Ceramics Co., Ltd.R&D Center
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Matsumoto Nobuo
Shonan Institute of Technology, 1-1-25 Nishikaigan, Tsujido, Fujisawa, Kanagawa 251-8511, Japan
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Hoshikawa Keigo
Faculty of Education, Shinshu University, Nishinagano, Nagano 380, Japan
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Huang Xinming
Faculty of Education, Shinshu University, Nishinagano, Nagano 380, Japan
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Walmsley John
SINTEF Materials and Chemistry, NO-7465 Trondheim, Norway
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Holmestad Randi
Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
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Nishimura Suzuka
Shonan Institute of Technology, Fujisawa, Kanagawa 251-8511, Japan
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Ino Yuji
Department of Electrical Engineering, Keio University, Yokohama 223-8522, Japan
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Hirai Muneyuki
Shonan Institute of Technology, Fujisawa, Kanagawa 251-8511, Japan
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Terashima Kazutaka
Shonan Institute of Technology, Fujisawa, Kanagawa 251-8511, Japan
著作論文
- Analysis of Oxygen Evaporation Rate and Dissolution Rate Concerning Czochralski Si Crystal Growth : Effect of Ar Pressure
- Analysis of an Oxygen Dissolution Process Concerning Czochralski (CZ) Si Crystal Growth using the Sessile Drop Method
- SiO Vapor Pressure in an SiO_2 Glass/Si Melt/SiO Gas Equilibrium System
- Silicon Crystal Growth under Equilibrium Condition of SiO_2-Si-SiO System: Equilibrium Oxygen Segregation Coefficient
- Silicon Whisker Growth Using Hot Filament Reactor with Hydrogen as Source Gas
- Analysis of Oxygen Evaporation Rate and Dissolution Rate Concerning Czochralski Si Crystal Growth: Effect of Ar Pressure
- Characteristics of Ohmic Contacts to n-Type Boron Phosphide
- Surface Tension Variation of Molten Silicon Measured by Ring Tensiometry Technique and Related Temperature and Impurity Dependence