HOSHIKAWA Keigo | Faculty of Education, Shinshu University

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概要

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著作論文

Development of a Sessile Drop Method Concerning Czochralski Si Crystal Growth
Expansion Behavior of Bubbles in Silica Glass Concerning Czochralski (CZ) Si Growth
Analysis of Oxygen Evaporation Rate and Dissolution Rate Concerning Czochralski Si Crystal Growth : Effect of Ar Pressure
Analysis of an Oxygen Dissolution Process Concerning Czochralski (CZ) Si Crystal Growth using the Sessile Drop Method
Dislocation-Free Czochralski Silicon Crystal Growth without the Dislocation-Elimination-Necking Process
High Strength Si Wafers with Heavy B and Ge Codoping
Dislocation Formation in Czochralski Si Crystal Growth Using an Annealed Heavily B-Doped Si Seed
Surface of Silica Glass Reacting with Silicon Melt: Effect of Raw Materials for Silica Crucibles
Dislocation-Free Czochralski Si Crystal Growth without Dash Necking Using a Heavily B and Ge Codoped Si Seed
In Situ Observation of the Interfacial Phase Formation at Si Melt/Silica Glass Interface
Dislocation-Free Czochralski Si Crystal Growth without the Dash-Necking Process : Growth from Undoped Si Melt
Heavily Boron-Doped Silicon Single Crystal Growth:Constitutional Supercooling
SiO Vapor Pressure in an SiO_2 Glass/Si Melt/SiO Gas Equilibrium System
Heavily Boron-Doped Silicon Single Crystal Growth: Boron Segregation
Silicon Crystal Growth under Equilibrium Condition of SiO_2-Si-SiO System: Equilibrium Oxygen Segregation Coefficient
Effect of Poling Field on Piezoelectric Properties of KNbO3 Crystal Grown by Vertical Bridgman Method

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