Surface of Silica Glass Reacting with Silicon Melt: Effect of Raw Materials for Silica Crucibles
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-01
著者
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Huang X
Nanjing Univ. Nanjing Chn
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HUANG Xinming
Faculty of Education, Shinshu University
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HOSHIKAWA Keigo
Faculty of Education, Shinshu University
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YAMAHARA Keiji
Yokohama Research Center, Mitsubishi Chemical Corporation
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SAKA Susumu
Faculty of Education, Shinshu University
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UTSUNOMIYA Akira
Yokohama Research Center, Mitsubishi Chemical Corporation
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TSURITA Yasushi
Yokohama Research Center, Mitsubishi Chemical Corporation
関連論文
- Temperature Dependence of the Viscosity of Molten Silicon Measured by the Oscillating Cup Method
- Surface Tension Variation of Molten Silicon Measured by the Ring Method
- Analysis of Deposits Evaporated frorm Sb-Doped Si Melts
- Evaporation of Oxygen-Bearing Species from Si Melt and Influence of Sb Addition
- Oxygen Solubilities in Si Melt : Influence of Sb Addition
- Development of a Sessile Drop Method Concerning Czochralski Si Crystal Growth
- Expansion Behavior of Bubbles in Silica Glass Concerning Czochralski (CZ) Si Growth
- Analysis of Oxygen Evaporation Rate and Dissolution Rate Concerning Czochralski Si Crystal Growth : Effect of Ar Pressure
- Analysis of an Oxygen Dissolution Process Concerning Czochralski (CZ) Si Crystal Growth using the Sessile Drop Method
- Dislocation-Free Czochralski Silicon Crystal Growth without the Dislocation-Elimination-Necking Process
- High Strength Si Wafers with Heavy B and Ge Codoping
- Dislocation Formation in Czochralski Si Crystal Growth Using an Annealed Heavily B-Doped Si Seed
- Surface of Silica Glass Reacting with Silicon Melt: Effect of Raw Materials for Silica Crucibles
- Dislocation-Free Czochralski Silicon Crystal Growth without Dash Necking
- Dislocation-Free Czochralski Si Crystal Growth without Dash Necking Using a Heavily B and Ge Codoped Si Seed
- In Situ Observation of the Interfacial Phase Formation at Si Melt/Silica Glass Interface
- Dislocation-Free Czochralski Si Crystal Growth without the Dash-Necking Process : Growth from Undoped Si Melt
- Heavily Boron-Doped Silicon Single Crystal Growth:Constitutional Supercooling
- SiO Vapor Pressure in an SiO_2 Glass/Si Melt/SiO Gas Equilibrium System
- Heavily Boron-Doped Silicon Single Crystal Growth: Boron Segregation
- Silicon Crystal Growth under Equilibrium Condition of SiO_2-Si-SiO System: Equilibrium Oxygen Segregation Coefficient
- Chemical Reaction of Sb Atoms in Si Melt
- Evaluation of Evaporated Species from Silicon Melt Surface during Sb-Doped Czochralski Silicon Crystal Growth
- Chermieal Reaction of Sb Atoms in Si Melt
- Evaporatiorn Rates of Oxides from Undoped and Sb-Doped Si Melts under Atmospheres of Pure Ne, Ar, and Kr
- Effect of Background Gas Pressure on Evaporation of Oxides from Sb-Doped Si Melt
- Relationship between Different Interfacial Phases and Oxygen Solubility in Silicon Melt
- Effect of Poling Field on Piezoelectric Properties of KNbO3 Crystal Grown by Vertical Bridgman Method
- Preparation of Porous Supports in the SiO_2-ZrO_2-Na_2O System
- Preparation of SiO_2-ZrO_2-Na_2O Porous Glass Supports
- Surface of Silica Glass Reacting with Silicon Melt: Effect of Raw Materials for Silica Crucibles