Evaporatiorn Rates of Oxides from Undoped and Sb-Doped Si Melts under Atmospheres of Pure Ne, Ar, and Kr

スポンサーリンク

概要

著者

関連論文

Effect of Impurity Doping on Density Anomalies in Molten Silicon
Influence of Atmosphere on Molten Silicon Density
Temperature Dependence of the Viscosity of Molten Silicon Measured by the Oscillating Cup Method
Temperature Dependence of the Electrical Resistivity of Molten Silicon
Effect of Gallium Addition on Density Variation of Molten Silicon
Surface Tension Variation of Molten Silicon Measured by the Ring Method
Density Variations in Molten Silicon Dependent on Its Thermal History
Density Variation of Molten Silicon Measured by an Improved Archimedian Method
Analysis of Deposits Evaporated frorm Sb-Doped Si Melts
Evaporation of Oxygen-Bearing Species from Si Melt and Influence of Sb Addition
Oxygen Solubilities in Si Melt : Influence of Sb Addition
High Temperature X-Ray Diffraction Study of Melt Structure of Silicon
Sound Velocity Measurements of Molten Germanium
Study of Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing
Development of a Sessile Drop Method Concerning Czochralski Si Crystal Growth
Expansion Behavior of Bubbles in Silica Glass Concerning Czochralski (CZ) Si Growth
Analysis of Oxygen Evaporation Rate and Dissolution Rate Concerning Czochralski Si Crystal Growth : Effect of Ar Pressure
Analysis of an Oxygen Dissolution Process Concerning Czochralski (CZ) Si Crystal Growth using the Sessile Drop Method
Dislocation-Free Czochralski Silicon Crystal Growth without the Dislocation-Elimination-Necking Process
High Strength Si Wafers with Heavy B and Ge Codoping
Dislocation Formation in Czochralski Si Crystal Growth Using an Annealed Heavily B-Doped Si Seed
Drastic Decrease in Viscosity of Molten LiNbO_3 under Non-Oxygen Atmosphere
Surface of Silica Glass Reacting with Silicon Melt: Effect of Raw Materials for Silica Crucibles
Dislocation-Free Czochralski Silicon Crystal Growth without Dash Necking
Dislocation-Free Czochralski Si Crystal Growth without Dash Necking Using a Heavily B and Ge Codoped Si Seed
In Situ Observation of the Interfacial Phase Formation at Si Melt/Silica Glass Interface
Dislocation-Free Czochralski Si Crystal Growth without the Dash-Necking Process : Growth from Undoped Si Melt
Heavily Boron-Doped Silicon Single Crystal Growth:Constitutional Supercooling
SiO Vapor Pressure in an SiO_2 Glass/Si Melt/SiO Gas Equilibrium System
Heavily Boron-Doped Silicon Single Crystal Growth: Boron Segregation
Silicon Crystal Growth under Equilibrium Condition of SiO_2-Si-SiO System: Equilibrium Oxygen Segregation Coefficient
Chemical Reaction of Sb Atoms in Si Melt
Evaluation of Evaporated Species from Silicon Melt Surface during Sb-Doped Czochralski Silicon Crystal Growth
Chermieal Reaction of Sb Atoms in Si Melt
Evaporatiorn Rates of Oxides from Undoped and Sb-Doped Si Melts under Atmospheres of Pure Ne, Ar, and Kr
Effect of Background Gas Pressure on Evaporation of Oxides from Sb-Doped Si Melt
Relationship between Different Interfacial Phases and Oxygen Solubility in Silicon Melt
In Situ Observation of Etching Processes of Silica Glasses by Silicon Melts
Estimation of Surface Tension of Molten Silicon Using a Dynamic Hanging Drop
Influence of Surface Melt Flow on Oxygen Inhomogeneity in Czochralski-Grown Silicon Single Crystal: Studied by Double-Layered Czochralski (DLCZ) Melt Quenching Technique

もっと見る

スポンサーリンク