Estimation of Surface Tension of Molten Silicon Using a Dynamic Hanging Drop
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概要
- 論文の詳細を見る
A new method to determine the surface tension of high-temperature liquids was developed using the rotation of a hanging drop. The measurement of surface tension of silicon melt was performed by observing the oscillation of a silicon droplet hanging from a SiC-coated carbon rod. The oscillation of the liquid drop was induced by a sudden high rotation speed above 570 rpm. The surface tension of molten silicon was estimated as 0.819 N/m at the melting point of 1415℃ and its temperature coefficient was -0.308×10^<-3> N/mK. We concluded that the dynamic hanging drop method could be used to measure the surface tension of high-temperature liquids.
- 社団法人応用物理学会の論文
- 1995-05-15
著者
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KIMURA Shigeyuki
Kimura Metamelt Project, ERATO, JRDC, Tsukuba Research Consortium
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YOKOTANI Atsushi
Department of Electrical and Electronic Engineering, University of Miyazaki
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Yokotani Atsushi
Department Of Electric And Electronic Engineering Miyazaki University
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Chung Sang-ik
Kimura Metamelt Project Erato Jrdc Tsukuba Research Consortium
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IZUNOME Koji
Kimura METAMELT Project, ERATO, JRDC
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Izunome Koji
Kimura Metamelt Project Erato Jrdc Tsukuba Research Consortium
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Kimura Shigeyuki
Kimura Metamelt Project
関連論文
- Effect of Impurity Doping on Density Anomalies in Molten Silicon
- Influence of Atmosphere on Molten Silicon Density
- Temperature Dependence of the Viscosity of Molten Silicon Measured by the Oscillating Cup Method
- Temperature Dependence of the Electrical Resistivity of Molten Silicon
- Effect of Gallium Addition on Density Variation of Molten Silicon
- Surface Tension Variation of Molten Silicon Measured by the Ring Method
- Density Variations in Molten Silicon Dependent on Its Thermal History
- Density Variation of Molten Silicon Measured by an Improved Archimedian Method
- Analysis of Deposits Evaporated frorm Sb-Doped Si Melts
- Evaporation of Oxygen-Bearing Species from Si Melt and Influence of Sb Addition
- Oxygen Solubilities in Si Melt : Influence of Sb Addition
- Erasing Process of Thermally Poled Optical Nonlinearities in Silica Glasses with KrF Excimer Laser Pulses
- Ultrasoft X-Ray Emission Spectroscopic Analysis for Effects of Vacuum Ultraviolet Rare Gas Excimer Laser Irradiation on Silicon Nitride Films
- Sound Velocity Measurements of Molten Germanium
- Hot Ion Beam Generation from Rare-Gas Cryogenic Targets
- Drastic Decrease in Viscosity of Molten LiNbO_3 under Non-Oxygen Atmosphere
- Amorphous Silicon Film Deposition from SiH_4 by Chemical Vapor Deposition with Argon Excimer Lamp
- Analysis of the Photochemical Reaction on the Surface for Room Temperature Deposition of SiO_2 Thin Films by Photo-CVD using Vacuum Ultraviolet Light
- Evaluation of Evaporated Species from Silicon Melt Surface during Sb-Doped Czochralski Silicon Crystal Growth
- Chermieal Reaction of Sb Atoms in Si Melt
- Evaporatiorn Rates of Oxides from Undoped and Sb-Doped Si Melts under Atmospheres of Pure Ne, Ar, and Kr
- Effect of Background Gas Pressure on Evaporation of Oxides from Sb-Doped Si Melt
- Time-Resolving Image Analysis of Drilling of Thin Silicon Substrates with Femtosecond Laser Ablation
- In Situ Observation of Etching Processes of Silica Glasses by Silicon Melts
- Estimation of Surface Tension of Molten Silicon Using a Dynamic Hanging Drop
- A New Photo-Material Processing Using Incoherent Vacuum Ultraviolet Radiation
- Silicon Nitride Film Deposition by Photochemical Vapor Deposition Using an Argon Excimer Lamp
- Hot Ion Beam Generation from Rare-Gas Cryogenic Targets
- Time-Resolving Image Analysis of Drilling of Thin Silicon Substrates with Femtosecond Laser Ablation
- Amorphous Silicon Film Deposition from SiH4 by Chemical Vapor Deposition with Argon Excimer Lamp
- Influence of Surface Melt Flow on Oxygen Inhomogeneity in Czochralski-Grown Silicon Single Crystal: Studied by Double-Layered Czochralski (DLCZ) Melt Quenching Technique
- Analysis of the Photochemical Reaction on the Surface for Room Temperature Deposition of SiO2 Thin Films by Photo-CVD using Vacuum Ultraviolet Light
- Nitridation in Photon-Assisted Process Using Argon Excimer Lamp
- Erratum: "Amorphous Silicon Film Deposition from SiH4 by Chemical Vapor Deposition with Argon Excimer Lamp"