Erasing Process of Thermally Poled Optical Nonlinearities in Silica Glasses with KrF Excimer Laser Pulses

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-03-30

著者

• Kameyama Akihiro

  Department of Applied Chemistry, Faculty of Engineering, Saitama University

• Kameyama Akihiro

  Department Of Electrical And Electronic Engineering University Of Miyazaki

• KUROSAWA Kou

  Department of Electrical Engineering, Miyazaki University

• YOKOTANI Atsushi

  Department of Electrical and Electronic Engineering, University of Miyazaki

• Yokotani Atsushi

  Department Of Electrical And Electronic Engineering And Photon Science Center University Of Miyazaki

• Yokotani Atsushi

  Univ. Miyazaki Miyazaki Jpn

• Yokotani Atsushi

  Department Of Electric And Electronic Engineering Miyazaki University

• Kurosawa K

  Jst Satellite Miyazaki

• Kurosawa Kou

  Department Of Electronics University Of Osaka Prefecture

• Kurosawa Kou

  Department Of Electrical And Electronic Engineering University Of Miyazaki

• Kurosawa Kou

  Department of Electrical and Electronic Engineering and Photon Science Center, University of Miyazaki, 1-1 Gakuen Kibanadai Nishi, Miyazaki, Miyazaki 889-2192, Japan

関連論文

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• Eutectic α-Fe_2Si_5 and ε-FeSi Formed in an Arc Furnace Showed a Three-Layer Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
• Erasing Process of Thermally Poled Optical Nonlinearities in Silica Glasses with KrF Excimer Laser Pulses
• Ultrasoft X-Ray Emission Spectroscopic Analysis for Effects of Vacuum Ultraviolet Rare Gas Excimer Laser Irradiation on Silicon Nitride Films
• Silicon Precipitation Induced by Argon Excimer Laser in Surface Layers of Si_3N_4
• Observations of SiC Mirror Damage Induced by an Argon Excimer Laser
• Pb-Amount Dependence of Copper and Oxygen Valence in Pb-Doped Bi-Sr-Ca-Cu-O Superconductors
• Studies of Crystallization Processes of Amorphous Chalcogenide Thin Films with Electrical Measurements : FUTURE TECHNOLOGY
• Hot Ion Beam Generation from Rare-Gas Cryogenic Targets
• Amorphous Silicon Film Deposition from SiH_4 by Chemical Vapor Deposition with Argon Excimer Lamp
• Analysis of the Photochemical Reaction on the Surface for Room Temperature Deposition of SiO_2 Thin Films by Photo-CVD using Vacuum Ultraviolet Light
• Time-Resolving Image Analysis of Drilling of Thin Silicon Substrates with Femtosecond Laser Ablation
• Growth of NiO Crystals by Chemical Transport with HCI in a Closed Tube
• Antiferromagnetic Domain Structures in Vapour-Grown NiO (111) Platelets Containing Growth Twins
• Growth of Thin Plate-Like NiO Crystals by Chemical Transport
• Hall Mobility Enhancement in AgBiTe_2-Ag_2Te Composites
• Low Temperature Vapor Phase Epitaxy of Undoped ZnSe Films on (100) GaAs Using Metallic Zn and Se
• Extended Broad-band Emission in Vacuum Ultraviolet by Multi-Rare-Gas Silent Discharges
• Estimation of Surface Tension of Molten Silicon Using a Dynamic Hanging Drop
• Surface Alteration of Amorphous Si_3N_4 Films by ArF Excimer Laser Irradiation
• A New Photo-Material Processing Using Incoherent Vacuum Ultraviolet Radiation
• The State of the Art of Rare Gas Excimer Lasers and Lamps as a Light Source for Giga-bit Lithography
• Vacuum Ultraviolet Laser-Induced Surface Alteration of SiO_2 : Beam Induced Physics and Chemistry
• Vacuum Ultraviolet Laser-Induced Surface Alteration of SiO_2
• Beam Profile Measurement of Vacuum Ultraviolet Lasers with Photostimulable Phosphor
• Dynamics of Resonant Tunneling in Double-Barrier Structures with Trapezoidal Potential Profile
• Silicon Nitride Film Deposition by Photochemical Vapor Deposition Using an Argon Excimer Lamp
• Hot Ion Beam Generation from Rare-Gas Cryogenic Targets
• Time-Resolving Image Analysis of Drilling of Thin Silicon Substrates with Femtosecond Laser Ablation
• Amorphous Silicon Film Deposition from SiH4 by Chemical Vapor Deposition with Argon Excimer Lamp
• Analysis of the Photochemical Reaction on the Surface for Room Temperature Deposition of SiO2 Thin Films by Photo-CVD using Vacuum Ultraviolet Light
• Nitridation in Photon-Assisted Process Using Argon Excimer Lamp
• Erratum: "Amorphous Silicon Film Deposition from SiH4 by Chemical Vapor Deposition with Argon Excimer Lamp"

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