Nitridation in Photon-Assisted Process Using Argon Excimer Lamp
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概要
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We attempted silicon nitridation that continuously deposits silicon with monosilane (SiH4) and nitrides the silicon with ammonia (NH3) at a low temperature using a vacuum ultraviolet excimer lamp. We used an argon excimer lamp ($\lambda=126$ nm, $h \nu=9.8$ eV) so that SiH4 and NH3 can absorb photons and dissociate. Nitrogen exists only near the film surface at a low temperature, and its concentration increases at a high temperature. This photon-assisted process is very feasible for the nitridation of semiconductor devices and flat panel displays in the near future, because it is a low-temperature and low-damage process.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-05-15
著者
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KATTO Masahito
Department of Electrical and Electronic Engineering and Photon Science Center, University of Miyazak
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Yokotani Atsushi
Department Of Electric And Electronic Engineering Miyazaki University
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TOSHIKAWA Kiyohiko
Department of Electrical and Electronic Engineering, University of Miyazaki
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Kurosawa Kou
Department of Electrical and Electronic Engineering and Photon Science Center, University of Miyazaki, 1-1 Gakuen Kibanadai Nishi, Miyazaki, Miyazaki 889-2192, Japan
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Amari Kouichi
Department of Electrical and Electronic Engineering, University of Miyazaki, 1-1 Gakuenkibanadainishi, Miyazaki 889-2192, Japan
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Ishimura Sou
Department of Electrical and Electronic Engineering, University of Miyazaki, 1-1 Gakuenkibanadainishi, Miyazaki 889-2192, Japan
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- Erratum: "Amorphous Silicon Film Deposition from SiH4 by Chemical Vapor Deposition with Argon Excimer Lamp"