Silicon Nitride Film Deposition by Photochemical Vapor Deposition Using an Argon Excimer Lamp
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概要
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In this paper, we report the deposition of silicon nitride (SiNx) films for the production of semiconductor devices and flat panel displays, by chemical vapor deposition with vacuum ultraviolet excimer lamps (VUV-CVD) using SiH4 and NH3 as raw materials. An Ar2* excimer lamp ($\lambda=126$ nm, $h\nu=9.8$ eV) with a high photon energy was used to directly excite and dissociate SiH4 through a photochemical reaction. SiNx films were successfully formed at a low temperature of 100 °C with the Ar2* excimer lamp. Although the Si-rich films were obtained using an Ar2* lamp, they showed a quality almost similar to that of films obtained by conventional plasma-CVD at 400 °C.
- 2007-06-15
著者
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KATTO Masahito
Department of Electrical and Electronic Engineering and Photon Science Center, University of Miyazak
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KUROSAWA Kou
JST Satellite Miyazaki
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Yokotani Atsushi
Department Of Electric And Electronic Engineering Miyazaki University
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Kurosawa Kou
JST Satellite Miyazaki, Japan Science and Technology Agency, 1-1 Gakuenkibanadainishi, Miyazaki 889-2192, Japan
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Maezono Yoshinari
JST Satellite Miyazaki, Japan Science and Technology Agency, 1-1 Gakuenkibanadainishi, Miyazaki 889-2192, Japan
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Amari Kouichi
Department of Electrical and Electronic Engineering, University of Miyazaki, 1-1 Gakuenkibanadainishi, Miyazaki 889-2192, Japan
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Katto Masahito
Department of Electrical and Electronic Engineering, University of Miyazaki, 1-1 Gakuenkibanadainishi, Miyazaki 889-2192, Japan
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Ishimura Sou
Department of Electrical and Electronic Engineering, University of Miyazaki, 1-1 Gakuenkibanadainishi, Miyazaki 889-2192, Japan
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Toshikawa Kiyohiko
Wafer Process Engineering 1st Department, Miyazaki Oki Electric Co., Ltd., 727 Kihara, Kiyotake-cho, Miyazaki 889-1695, Japan
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- Erratum: "Amorphous Silicon Film Deposition from SiH4 by Chemical Vapor Deposition with Argon Excimer Lamp"