Growth of $\beta$-FeSi2 Thin Films on Silicon Substrates by Pulsed Laser Deposition Using $\varepsilon$-FeSi Alloy Targets
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概要
- 論文の詳細を見る
The growth of highly oriented $\beta$-FeSi2 thin films on Si substrates was successfully demonstrated by pulsed laser deposition using $\varepsilon$-FeSi alloy targets. In our method, Si atoms are supplied from the substrate and a surface reaction occurs to form the $\beta$-FeSi2 layer. This growth process produces a sharp interface between the film and the substrate.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-02-15
著者
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Takigawa Yasuo
Department Of Electronic Engineering Osaka Electro-communication University
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KUROSAWA Kou
JST Satellite Miyazaki
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Tode Mayumi
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
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Katto Masahito
Cooperative Research Center University Of Miyazaki
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Muroya Masaaki
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
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Ohmukai Masato
Department Of Electrical And Computer Engineering Akashi National College Of Technology
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Kurosawa Kou
JST Satellite Miyazaki, 1-1 Gakuen-Kibanadai-Nishi, Miyazaki 889-2192, Japan
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Muroya Masaaki
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatumachi, Neyagawa, Osaka 572-8530, Japan
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Tode Mayumi
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatumachi, Neyagawa, Osaka 572-8530, Japan
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Takigawa Yasuo
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatumachi, Neyagawa, Osaka 572-8530, Japan
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Ohmukai Masato
Department of Electrical and Computer Engineering, Akashi National College of Technology, 679-3 Nishioka, Uozumi, Hyogo 647-8501, Japan
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Katto Masahito
Cooperative Research Center, University of Miyazaki, 1-1 Gakuen-Kibanadai-Nishi, Miyazaki 889-2192, Japan
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