Hot Ion Beam Generation from Rare-Gas Cryogenic Targets
スポンサーリンク
概要
- 論文の詳細を見る
Energetic ions having a maximum velocity of the order of $10^{7}$ cm/s were detected in the interaction of a frequency-doubled $Q$-switched Nd:YAG laser with rare-gas cryogenic targets at the laser intensity of $1 \times 10^{12}$ W/cm2. It was observed that the angular distribution of ions strongly peaked in the target normal direction confined to a narrow range of angle following $\sim\cos^p\theta$ ($ p=3--5$). Scaling of the ion current and their velocity as a function of an incident laser energy were investigated. To analyze the effect of energetic particles from a plasma, a silicon substrate was used as a particle target. Its surface morphology revealed that micron-size solid fragments from the target dominantly affected the silicon surface.
- 2004-07-01
著者
-
HIGASHIGUCHI Takeshi
Department of Electrical and Electronic Engineering and Photon Science Center, University of Miyazak
-
MAEZONO Yoshinari
Department of Electrical and Electronic Engineering and Photon Science Center, University of Miyazak
-
KATTO Masahito
Department of Electrical and Electronic Engineering and Photon Science Center, University of Miyazak
-
Yokotani Atsushi
Department Of Electric And Electronic Engineering Miyazaki University
-
Rajyaguru Chirag
Department Of Electrical And Electronic Engineering And Photon Science Center University Of Miyazaki
-
Kubodera Shoichi
Department Of Electrical And Electronic Engineering And Photon Science Center University Of Miyazaki
-
Sasaki Wataru
Department Of Cardiology Akita Kumiai Hospital
-
Kurosawa Kou
Department of Electrical and Electronic Engineering and Photon Science Center, University of Miyazaki, 1-1 Gakuen Kibanadai Nishi, Miyazaki, Miyazaki 889-2192, Japan
-
Kubodera Shoichi
Department of Electrical and Electronic Engineering and Photon Science Center, University of Miyazaki, 1-1 Gakuen Kibanadai Nishi, Miyazaki, Miyazaki 889-2192, Japan
-
Higashiguchi Takeshi
Department of Electrical and Electronic Engineering and Photon Science Center, University of Miyazaki, 1-1 Gakuen Kibanadai Nishi, Miyazaki, Miyazaki 889-2192, Japan
-
Higashiguchi Takeshi
Department of Electrical and Electronic Engineering and Photon Science Center, Miyazaki University, Gakuen Kibanadai Nishi 1-1, Miyazaki 889-2192, Japan
-
Rajyaguru Chirag
Department of Electrical and Electronic Engineering and Photon Science Center, University of Miyazaki, 1-1 Gakuen Kibanadai Nishi, Miyazaki, Miyazaki 889-2192, Japan
-
Maezono Yoshinari
Department of Electrical and Electronic Engineering and Photon Science Center, University of Miyazaki, 1-1 Gakuen Kibanadai Nishi, Miyazaki, Miyazaki 889-2192, Japan
-
Yokotani Atsushi
Department of Electrical and Electronic Engineering and Photon Science Center, University of Miyazaki, 1-1 Gakuen Kibanadai Nishi, Miyazaki, Miyazaki 889-2192, Japan
-
Katto Masahito
Department of Electrical and Electronic Engineering and Photon Science Center, University of Miyazaki, 1-1 Gakuen Kibanadai Nishi, Miyazaki, Miyazaki 889-2192, Japan
関連論文
- Eutectic α-Fe_2Si_5 and ε-FeSi Grown by the Czochralski Method from Arc Melt(Structure and Mechanical and Thermal Properties of Condensed Matter)
- Eutectic α-Fe_2Si_5 and ε-FeSi Formed in an Arc Furnace Showed a Three-Layer Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
- Erasing Process of Thermally Poled Optical Nonlinearities in Silica Glasses with KrF Excimer Laser Pulses
- Ultrasoft X-Ray Emission Spectroscopic Analysis for Effects of Vacuum Ultraviolet Rare Gas Excimer Laser Irradiation on Silicon Nitride Films
- 1n T Term and Magnetic Field Effect in Conductivity of Ni Thin Film
- Experimental Study of Electron Localization in a Two-Dimensional Metal
- In T Dependence of Resistivity in Two-Dimensionally Coupled Fine Particles of Cu
- Silicon Precipitation Induced by Argon Excimer Laser in Surface Layers of Si_3N_4
- Observations of SiC Mirror Damage Induced by an Argon Excimer Laser
- Pb-Amount Dependence of Copper and Oxygen Valence in Pb-Doped Bi-Sr-Ca-Cu-O Superconductors
- Studies of Crystallization Processes of Amorphous Chalcogenide Thin Films with Electrical Measurements : FUTURE TECHNOLOGY
- Hot Ion Beam Generation from Rare-Gas Cryogenic Targets
- Vacuum Ultraviolet Spectroscopic System Using a Laser-Produced Plasma
- Slicing and Adding of Short Microwave Pulse by Laser Produced Plasma : Nuclear Science, Plasmas, and Electric Discharges
- Excitation Mechanisms in Pulsed Ar-Kr Discharges
- Current Dependence of Spontaneous Emission in CW Kr-Xe Mixed Ion Laser
- Enlerged Frequency Upshift from DC to AC Radiation Converter using Boundary Effect of Plasma-filled Waveguide
- Further Frequency Upshift in DC to AC Radiation Converter by Perpendicular DC Magnetic Field
- ABNORMAL CHANGE OF HEART RATE AFTER EXERCISE IN YOUNG ATHLETES HAVING CHEST DISCOMRORT DURING OR AFTER HARD TRAINING : Exercise Test, Rehabilitation : 53 Annual Scientific Meeting, Japanese Circulation Society
- -70-LEFT VENTRICULAR FUNCTION IN EXPERIMETAL CHRONIC CORONARY ARTERIES OCCLUSION(1st Report) : Ischemic Heart Disease : PROCEEDINGS OF THE 42nd ANNUAL MEETING OF THE JAPANESE CIRCULATION SOCIETY
- Metal Instability of (DMe-DCNQI)_2 Cu Induced by Uniaxial Stress and Enhancement of Electron Mass
- Analysis of the Photochemical Reaction on the Surface for Room Temperature Deposition of SiO_2 Thin Films by Photo-CVD using Vacuum Ultraviolet Light
- Current Dependence of Spontaneous Emission in CW Ar-Kr Mixed Ion Laser
- Growth of NiO Crystals by Chemical Transport with HCI in a Closed Tube
- Antiferromagnetic Domain Structures in Vapour-Grown NiO (111) Platelets Containing Growth Twins
- Growth of Thin Plate-Like NiO Crystals by Chemical Transport
- Magnetization in Phosphorus Doped Silicon
- NMR Study on Electronic States in Phosphorus Doped Silicon
- NMR Study on Heavily Doped Silicon. II
- NMR Study on Heavily Doped Silicon. I
- Hall Mobility Enhancement in AgBiTe_2-Ag_2Te Composites
- Superconductivity and Anderson Localization in Zinc Films
- Extended Broad-band Emission in Vacuum Ultraviolet by Multi-Rare-Gas Silent Discharges
- Inelastic Scattering and Spin Scattering Times in Metallic Thin Films
- Spin-Orbit Interaction and Electronic Conduction in Two-Dimensional Disordered Metals
- Use of Tunnel Diode for RF-SQUID Detection System
- Estimation of Surface Tension of Molten Silicon Using a Dynamic Hanging Drop
- Specific Heat Measurements of Ce_La_xB_6
- Superparamagtetism of Ni Fine Particles
- The State of the Art of Rare Gas Excimer Lasers and Lamps as a Light Source for Giga-bit Lithography
- Vacuum Ultraviolet Laser-Induced Surface Alteration of SiO_2 : Beam Induced Physics and Chemistry
- Vacuum Ultraviolet Laser-Induced Surface Alteration of SiO_2
- Beam Profile Measurement of Vacuum Ultraviolet Lasers with Photostimulable Phosphor
- NMR Properties of Superconducting Fine Particles: Al and Sn
- NMR Study of Superconducting Sn Small Particles
- Experimental Observation of Short Microwave Generation via Relativistic Ionization Front Produced by CO_2 Laser
- Dynamics of Resonant Tunneling in Double-Barrier Structures with Trapezoidal Potential Profile
- Separation Technique for Raisins and Stems Utilizing Characteristics of Polarization
- Resistivity Measurement in Two-Dimensional Random Array of Josephson-Coupled Fine Particles of Tin
- NMR of ^Al in PdMn, PdFe and PdNi
- Scattering of Electrons in Heavily Doped Semiconductors
- Reverse Annealing in Hall Mobility Recovery in Irradiated Arsenic-Doped Germanium
- NMR Study of Al Small Particle
- Anisotropy of the Superconducting Energy Gap of Gallium Single Crystal Obtained from Tunneling Experiments
- Scattering of Electrons in Heavily Doped n-Type Germanium
- Anomalous Propagation of Short-Wavelength Third Sound
- The Anti-Localization Effect in Bi Thin Films
- Silicon Nitride Film Deposition by Photochemical Vapor Deposition Using an Argon Excimer Lamp
- Electric Conduction in Heavily Doped Germanium (Selected Topics in Semiconductor Physics) -- (Transport)
- Hot Ion Beam Generation from Rare-Gas Cryogenic Targets
- Time-Resolving Image Analysis of Drilling of Thin Silicon Substrates with Femtosecond Laser Ablation
- Metal-Nonmetal Transition in Si : P
- Experiments on the Localization Effects in Bulk Semiconductor (アンダ-ソン局在の総合的研究(昭和57年度文部省科学研究費研究会報告))
- Amorphous Silicon Film Deposition from SiH4 by Chemical Vapor Deposition with Argon Excimer Lamp
- Vacuum Ultraviolet Spectroscopic System Using a Laser-Produced Plasma
- Analysis of the Photochemical Reaction on the Surface for Room Temperature Deposition of SiO2 Thin Films by Photo-CVD using Vacuum Ultraviolet Light
- Nitridation in Photon-Assisted Process Using Argon Excimer Lamp
- Enlarged Frequency Upshift from DC to AC Radiation Converter using Boundary Effect of Plasma-filled Waveguide
- Erratum: "Amorphous Silicon Film Deposition from SiH4 by Chemical Vapor Deposition with Argon Excimer Lamp"