Amorphous Silicon Film Deposition from SiH4 by Chemical Vapor Deposition with Argon Excimer Lamp
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概要
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We have deposited amorphous silicon thin films from monosilane (SiH4) gas by photochemical vapor deposition using a vacuum ultraviolet excimer lamp (VUV-CVD). We used an argon excimer lamp ($\lambda=126$ nm, $h\nu=9.8$ eV) whose photons are strongly absorbed by SiH4 gas. The substrate temperatures were changed from 25 to 300°C. When the temperature was lower than 150°C, the films included H–Si–H units and H2 molecules in its structure. When it was higher than 150°C, the main structural unit was Si–H.
- 2005-11-15
著者
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Yokotani Atsushi
Department Of Electric And Electronic Engineering Miyazaki University
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TOSHIKAWA Kiyohiko
Department of Electrical and Electronic Engineering, University of Miyazaki
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Kurosawa Kou
Department of Electrical and Electronic Engineering and Photon Science Center, University of Miyazaki, 1-1 Gakuen Kibanadai Nishi, Miyazaki, Miyazaki 889-2192, Japan
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- Erratum: "Amorphous Silicon Film Deposition from SiH4 by Chemical Vapor Deposition with Argon Excimer Lamp"