Hall Mobility Enhancement in AgBiTe_2-Ag_2Te Composites
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概要
- 論文の詳細を見る
We prepared a series of (AgBiTe_2)_<1-x>(Ag_2Te)_x (O〓x〓1) composite materials by means of melting and cooling down. Their Hall coefficient and electrical conductivity were measured by the standard van der Pauw technique in the temperature range from 93 K to 283 K. The Hall mobility was calculated based on these data. Composite (AgBiTe_2)_<0.125>(Ag_2Te)_<0.875> showed a higher Hall mobility than pure Ag_2Te below 243 K. At approximately 143 K, the carrier type changes from p-type to n-type with increasing the temperature in Ag_2Te. There is competition between the negative and positive carriers in both phases, resulting in enhancement of the mobility.
- 社団法人応用物理学会の論文
- 2002-05-15
著者
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TAKIGAWA Yasuo
Department of Electronics, Osaka Electro-communication University
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KUROSAWA Kou
Department of Electrical Engineering, Miyazaki University
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SAKAKIBARA Tsutomu
Department of BioScience, Faculty of Science, Kagoshima University
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Takigawa Y
Osaka Electro‐communication Univ. Osaka Jpn
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Takigawa Y
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
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Takigawa Yasuo
Department Of Electronic Engineering Osaka Electro-communication University
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Takigawa Yasuo
Department Of Solid State Electronics Osaka Electro-communication University
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Kurosawa Kou
Department Of Electrical And Electronic Engineering. University Of Miyazaki
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Kurosawa Kou
Department Of Electrical And Electronic Engineering University Of Miyazaki
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Takigawa Y
Department Of Electronic Engineering Osaka Electro-communication University
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Sakakibara Takeshi
Department Of Electric Electronic And Communication Engineering Faculty Of Science And Engineering C
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Sakakibara Tsutomu
Department Of Bioscience Faculty Of Science Kagoshima University
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Kurosawa Kou
Department of Electrical and Electronic Engineering and Photon Science Center, University of Miyazaki, 1-1 Gakuen Kibanadai Nishi, Miyazaki, Miyazaki 889-2192, Japan
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Takigawa Yasuo
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatumachi, Neyagawa, Osaka 572-8530, Japan
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