Deposition of Nitrogen Doped Carbon Film by Electrolysis of Methanol-Ammonia Solution
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概要
- 論文の詳細を見る
Nitrogen doped carbon film has been grown on silicon substrate at temperature of 60 degrees in the methanol-ammonia solution. The substrate was negatively biased with a dc potential less than 100 V for current density of 4 mA/cm2 as constant-current electrolysis. The work function and the resistivity of the film decreased remarkably. From the results of Raman spectra and X-ray photoelectron spectroscopy, it was also confirmed that the film is amorphous containing only small amounts of diamond component, and nitrogen atoms are doped in the film though containing some organic residue.
- 社団法人 電気学会の論文
- 2003-04-01
著者
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Hashimoto Yuichi
Advanced Materials Research Center Canon Inc.
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Ueno Kazunori
Advanced Material Research Center Canon Inc.
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Sakakibara Takeshi
Department Of Electric Electronic And Communication Engineering Faculty Of Science And Engineering C
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KAMAMURA Minoru
Department of Electric, Electronic, and Communication Engineering, Facutly of Science and Engineerin
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Kamamura Minoru
Department Of Electric Electronic And Communication Engineering Facutly Of Science And Engineering C
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Hashimoto Yuichi
Advanced Material Research Center Canon Inc.
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