Effect of Ionization Potential of Hole Transport Layer on Device Characteristics of Organic Light Emitting Diode with Oxygen Plasma Treated Indium Tin Oxide

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-07-15

著者

• Hashimoto Y

  Shinshu Univ. Nagano Jpn

• SAKAKIBARA Takeshi

  Department of Electric, Electronic, and Communication Engineering, Faculty of Science and Engineerin

• HASHIMOTO Yuichi

  OD Project, Canon Inc.

• HAMAGAKI Manabu

  Beam Physics and Engineering Lab., The Institute of Physical and Chemical Research (RIKEN)

• Hamagaki M

  The Institute Of Physical And Chemical Research (riken)

• Hamagaki Manabu

  Beam Application Team Riken

• Sakakibara Takeshi

  Department Of Electric Electronic And Communication Engineering Faculty Of Science And Engineering C

• Hashimoto Yuichi

  Ol Project Canon Inc.

• Hashimoto Yuichi

  Od Project Canon Inc.

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• Effect of Ionization Potential of Hole Transport Layer on Device Characteristics of Organic Light Emitting Diode with Oxygen Plasma Treated Indium Tin Oxide

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