Relationship between Different Interfacial Phases and Oxygen Solubility in Silicon Melt

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Temperature Dependence of the Viscosity of Molten Silicon Measured by the Oscillating Cup Method
Temperature Dependence of the Electrical Resistivity of Molten Silicon
Effect of Gallium Addition on Density Variation of Molten Silicon
Surface Tension Variation of Molten Silicon Measured by the Ring Method
Density Variations in Molten Silicon Dependent on Its Thermal History
Density Variation of Molten Silicon Measured by an Improved Archimedian Method
Analysis of Deposits Evaporated frorm Sb-Doped Si Melts
Evaporation of Oxygen-Bearing Species from Si Melt and Influence of Sb Addition
Oxygen Solubilities in Si Melt : Influence of Sb Addition
Development of a Sessile Drop Method Concerning Czochralski Si Crystal Growth
Expansion Behavior of Bubbles in Silica Glass Concerning Czochralski (CZ) Si Growth
Analysis of Oxygen Evaporation Rate and Dissolution Rate Concerning Czochralski Si Crystal Growth : Effect of Ar Pressure
Analysis of an Oxygen Dissolution Process Concerning Czochralski (CZ) Si Crystal Growth using the Sessile Drop Method
Dislocation-Free Czochralski Silicon Crystal Growth without the Dislocation-Elimination-Necking Process
High Strength Si Wafers with Heavy B and Ge Codoping
Dislocation Formation in Czochralski Si Crystal Growth Using an Annealed Heavily B-Doped Si Seed
Surface of Silica Glass Reacting with Silicon Melt: Effect of Raw Materials for Silica Crucibles
Dislocation-Free Czochralski Silicon Crystal Growth without Dash Necking
Dislocation-Free Czochralski Si Crystal Growth without Dash Necking Using a Heavily B and Ge Codoped Si Seed
In Situ Observation of the Interfacial Phase Formation at Si Melt/Silica Glass Interface
Dislocation-Free Czochralski Si Crystal Growth without the Dash-Necking Process : Growth from Undoped Si Melt
Heavily Boron-Doped Silicon Single Crystal Growth:Constitutional Supercooling
SiO Vapor Pressure in an SiO_2 Glass/Si Melt/SiO Gas Equilibrium System
Heavily Boron-Doped Silicon Single Crystal Growth: Boron Segregation
Silicon Crystal Growth under Equilibrium Condition of SiO_2-Si-SiO System: Equilibrium Oxygen Segregation Coefficient
Chemical Reaction of Sb Atoms in Si Melt
Evaluation of Evaporated Species from Silicon Melt Surface during Sb-Doped Czochralski Silicon Crystal Growth
Chermieal Reaction of Sb Atoms in Si Melt
Evaporatiorn Rates of Oxides from Undoped and Sb-Doped Si Melts under Atmospheres of Pure Ne, Ar, and Kr
Effect of Background Gas Pressure on Evaporation of Oxides from Sb-Doped Si Melt
Relationship between Different Interfacial Phases and Oxygen Solubility in Silicon Melt
In Situ Observation of Etching Processes of Silica Glasses by Silicon Melts
Dependence of Time Dependent Dielectric Breakdown Characteristics on Mechanism for Silicon Epitaxial Growth on Misoriented Czochralski Silicon Crystal
Periodic Step and Terrace Formation on Si(100) Surface during Si Epitaxial Growth by Atmospheric Chemical Vapor Deposition

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