MATSUMOTO Nobuo | Shonan Institute of Technology
スポンサーリンク
概要
関連著者
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MATSUMOTO Nobuo
Shonan Institute of Technology
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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KIDO Takatoshi
Shonan Institute of Technology
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MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
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Kasu Makoto
Ntt Basic Research Laboratories
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Taniyasu Yoshitaka
Ntt Basic Research Laboratories Ntt Corporation
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Kumakura Kazuhide
Ntt Basic Laboratories Ntt Corporation
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KUMAKURA Kazuhide
NTT Basic Research Laboratories, NTT Corporation
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Kasu Makoto
Ntt Basic Research Laboratories Ntt Corporation
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TANIYASU Yoshitaka
NTT Basic Research Laboratories, NTT Corporation
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Hibino Hiroki
Ntt Basic Research Laboratories
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NAKAMURA Tomohiro
Shonan Institute of Technology
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Akasaka Tetsuya
Ntt Basic Research Laboratories Ntt Corporation
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Kumakura Kazuhide
Ntt Basic Research Laboratories Ntt Corporation
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Kobayashi Yasuyuki
Ntt Basic Research Laboratories
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Akasaka Tetsuya
NTT Basic Research Laboratories
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Kasu Makoto
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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HIBINO Hiroki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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Hibino Hiroki
Ntt Basic Research Laboratories Ntt Corporation
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YAMAUCHI Yoshiharu
NTT Basic Research Laboratories, NTT Corporation
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AKASAKA Tetsuya
NTT Basic Research Laboratories, NTT Corporation
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KOBAYASHI Yasuyuki
NTT Basic Research Laboratories, NTT Corporation
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YAMAUCHI Yoshiharu
NEL TechnoSupport
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TERASHIMA Kazutaka
Shonan Institute of Technology
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Holmestad Randi
Department Of Physics Norwegian University Of Science And Technology
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Makimoto Toshiki
Ntt Corp. Kanagawa Jpn
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Walmsley John
Sintef Materials And Chemistry
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Yamauchi Yoshiharu
Ntt Basic Research Laboratories
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Hibino Hiroki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Terashima Kazutaka
Shonan Institute of Technology, 1-1-25 Nishikaigan, Tsujido, Fujisawa, Kanagawa 251-8511, Japan
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Nagayoshi Hiroshi
Tokyo National College of Technology, 1220-2 Kunugida-machi, Hachioji, Tokyo 193-8610, Japan
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Nordmark Heidi
Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
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Nishimura Suzuka
Shonan Institute of Technology, 1-1-25 Nishikaigan, Tsujido, Fujisawa, Kanagawa 251-8511, Japan
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Ulyashin Alexander
Institute for Energy Technology, P.O.Box 40, NO-2027 Kjeller, Norway
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Makimoto Toshiki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Yamauchi Yoshiharu
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Taniyasu Yoshitaka
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Matsumoto Nobuo
Shonan Institute of Technology, 1-1-25 Tsujidonishikaigan, Fujisawa, Kanagawa 251-8511, Japan
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Matsumoto Nobuo
Shonan Institute of Technology, 1-1-25 Nishi-Kaigan Tsujido, Fujisawa, Kanagawa 251-8511, Japan
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Matsumoto Nobuo
Shonan Institute of Technology, 1-1-25 Nishikaigan, Tsujido, Fujisawa, Kanagawa 251-8511, Japan
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Walmsley John
SINTEF Materials and Chemistry, NO-7465 Trondheim, Norway
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Holmestad Randi
Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
著作論文
- Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
- Boron Nitride Thin Films Grown on Graphitized 6H–SiC Substrates by Metalorganic Vapor Phase Epitaxy
- Silicon Whisker Growth Using Hot Filament Reactor with Hydrogen as Source Gas
- Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates