Kobayashi Yasuyuki | Ntt Basic Research Laboratories

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概要

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著作論文

Nucleus and Spiral Growth Mechanisms of GaN Studied by Using Selective-Area Metalorganic Vapor Phase Epitaxy
Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy
Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE
GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers
Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
Phase Diagram of GaAs (111)B Surface during Metal-Organic Chemical Vapor Deposition Measured by Surface Photo-Absorption
Chemical Structure of As-Stabilized Surface during GaAs Metalorganic Vapor Phase Epitaxy Studied by Surface Photo-Absorption
Boron Nitride Thin Films Grown on Graphitized 6H–SiC Substrates by Metalorganic Vapor Phase Epitaxy
Surface Morphology and Carbon Incorporation for Hexagonal GaN/(111)B GaAs Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine and Trimethylgallium
In-Situ Control of Strained Heterostructure Growth
Growth of Boron Nitride on 6H–SiC Substrate by Flow-Rate Modulation Epitaxy
In Situ Interface Control of Pseudomorphic InAs/InP Quantum Well Structure Growth by Surface Photo-Absorption
As and P Desorption from III-V Semiconductor Surface in Metalorganic Chemical Vapor Deposition Studied by Surface Photo-Absorption
Growth-Rate Self-Limitation Mechanism in InP Atomic Layer Epitaxy Studied by Surface Photo-Absorption
Structural and Optical Properties of AlGaInN/GaN Grown by MOVPE
Growth of Boron Nitride on 6H-SiC Substrate by Flow-rate Modulation Epitaxy
A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
Structural and Optical Properties of AlGaInN/GaN Grown by MOVPE

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