Structural and Optical Properties of AlGaInN/GaN Grown by MOVPE
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概要
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Structural and optical properties of AlyGa1-x-yInxN with $y$ from 0.17 to 0.66 and $x$ from 0.01 to 0.08 grown on GaN epitaxial layers by metalorganic vapor phase epitaxy are investigated by X-ray diffraction (XRD), room-temperature photoluminescence (RT-PL), and transmission electron microscopy (TEM). From XRD measurement, it is found that phase separation of AlGaInN occurs with an increase of Al and In contents. For AlyGa1-x-yInxN layers with higher Al ($y>50$%) and In ($x>8$%) contents, a long-range ordered structure is observed along the growth direction for the first time by TEM. RT-PL shows single peak band emissions from 300 to 335 nm for the AlyGa1-x-yInxN layers with Al ($y>50$%) and $x$ from 0.01 to 0.08. By controlling trimethylalminium flow rates and growth temperatures, growth of lattice-matched strain-free Al0.19Ga0.77In0.04N layer to GaN is confirmed by persistent oscillation of in-situ shallow-angle reflectance monitoring and XRD, and 364-nm band emission is observed for the layer in RT-PL.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-04-15
著者
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Yamauchi Yoshiharu
Ntt Basic Research Laboratories
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Kobayashi Yasuyuki
Ntt Basic Research Laboratories
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Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
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Kobayashi Yasuyuki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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