High Two-Dimensional Electron Mobility in Si Atomic-Layer Doped N-AlGaAs/GaAs Grown by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Si atomic-layer doped n-AlGaAs/GaAs structures have been grown by metalorganic chemical vapor deposition using triethyl sources, arsine and silane. Two dimensional electron mobility of 1.3×10^6 cm^2/V・s is obtained at 4.2 K for a sheet electron concentration of 4.8×10^<11> cm^<-2>. Because of the high quality of the two-dimensional electron gas, acoustic phonon scattering can be seen in the temperature dependence.
- 社団法人応用物理学会の論文
- 1993-05-01
著者
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KOBAYASHI Naoki
NTT Basic Research Laboratories
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
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