Using Tertiary Butylamine for Nitrogen Doping during Migration-Enhanced Epitaxial Growth of ZnSe
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概要
- 論文の詳細を見る
We report the first use of tertiary butylamine as a nitrogen source for doping nitrogen into ZnSe. Tertiary butylamine cracked at various temperatures from 550 to 850℃ was supplied onto ZnSe grown by migration-enhanced epitaxy. Photoluminescence of the doped ZnSe films indicated that nitrogen concentration increases with increasing cracking temperature. Secondary ion mass spectrometry revealed that a uniform nitrogen concentration as high as 8 × 10^<18> cm^<-3> could be achieved. The results of site-selective doping onto Se and Zn surfaces during growth imply that nitrogen is more efficiently incorporated into ZnSe when the dopant is supplied at the same time that Se is supplied.
- 社団法人応用物理学会の論文
- 1992-06-01
著者
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KOBAYASHI Naoki
NTT Basic Research Laboratories
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Zhang Suian
Ntt Basic Research Laboratories
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Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
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