Theoretical Study of Silicon Adatom Transfer from the Silicon Surface in Scanning Tunneling Microscopy (<Special Issue> Scanning Tunneling Microscopy)
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概要
- 論文の詳細を見る
We have investigated the electronic structures of a silicon adatom displaced from a silicon surface with the tip of a scanning tunneling microscope using the recursion-transfer-matrix method. This method is an effective means of calculation for electronic states of a bielectrode system under electric field and current. The adiabatic potential surfaces of the adatom moving from the surface to the tip and the corresponding induced electron density distributions are presented for several values of bias voltage. A decrease in the activation barrier height is seen for both positive and negative bias cases when the tip-surface distance is 11 bohrs, while a monotonous decrease is seen only for the positive bias case at a tip-surface distance of 8 bohrs.
- 社団法人応用物理学会の論文
- 1997-06-30
著者
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KOBAYASHI Naoki
NTT Basic Research Laboratories
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Kobayashi Nobuhiko
Depart. Dermatol. Nara Medical Univ.
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Kobayashi N
The University Of Electro-communications Department Of Applied Physics And Chemistry
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Hirose Kenji
Nec Research Institute
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Tsukada Masaru
Department Of Nano-science And Nano-technology Advanced School Of Science And Engineering Waseda Uni
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Tsukada Masaru
Department of Nano-Science and Nano-Engineering, Waseda University, 513 Waseda Tsurumaki-cho, Shinjuku-ku, Tokyo 162-0041, Japan
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