Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-06-15
著者
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MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
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KOBAYASHI Naoki
NTT Basic Research Laboratories
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MAEDA Narihiko
NTT Photonics Laboratories, NTT Corporation
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Maeda Narihiko
Ntt Corp. Atsugi‐shi Jpn
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Kobayashi N
The University Of Electro-communications Department Of Applied Physics And Chemistry
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WANG Chengxin
NTT Basic Research Laboratories, NTT Corporation
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TSUBAKI Kotaro
Department of Electrical and Electronic Engineering, Toyo University
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