WANG Chengxin | NTT Basic Research Laboratories, NTT Corporation

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概要

• 同名の論文著者
• NTT Basic Research Laboratories, NTT Corporationの論文著者

関連著者

• WANG Chengxin

  NTT Basic Research Laboratories, NTT Corporation

• TSUBAKI Kotaro

  Department of Electrical and Electronic Engineering, Toyo University

• MAKIMOTO Toshiki

  NTT Basic Research Laboratories, NTT Corporation

• KOBAYASHI Naoki

  NTT Basic Research Laboratories

• MAEDA Narihiko

  NTT Photonics Laboratories, NTT Corporation

• Maeda Narihiko

  Ntt Corp. Atsugi‐shi Jpn

• Maeda Narihiko

  Ntt Photonics Laboratories Ntt Corporation

• Kobayashi N

  The University Of Electro-communications Department Of Applied Physics And Chemistry

• Makimoto Toshiki

  Ntt Basic Laboratories Ntt Corporation

• Kobayashi Naoki

  Ntt Basic Laboratories Ntt Corporation

• Tsubaki Kotaro

  Department of Electrical and Electronic Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan

• Maeda Narihiko

  NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

• Wang Chengxin

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

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著作論文

• Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
• Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy

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