InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
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概要
- 論文の詳細を見る
We report our recent development of an InAlN barrier layer for GaN-based FETs. We fabricated a novel structure consisting of InAlN/AlGaN/GaN. With this structure, we achieved higher electron mobility and a flatter surface than those for the conventional InAlN/GaN heterostructures. We investigated the AlN interlayer thickness dependence of mobility and surface flatness. The thickness strongly affected the mobility and the surface roughness of InAlN/GaN. In contrast, the variation of these values is suppressed for the new structure. We achieved low sheet resistance even for the new structure without an AlN interlayer. These results point to the possibility of developing GaN-based FETs with high performance and high reliability.
- 社団法人電子情報通信学会の論文
- 2009-06-17
著者
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Shigekawa Naoteru
NTT Photonics Laboratories
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Kobayashi T
Ntt Corp. Kanagawa Jpn
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MAEDA Narihiko
NTT Photonics Laboratories, NTT Corporation
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HIROKI Masanobu
NTT Photonics Laboratories, NTT Corporation
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KOBAYASHI Takashi
NTT Photonics Laboratories, NTT Corporation
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Maeda Narihiko
Ntt Corp. Atsugi‐shi Jpn
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Maeda Narihiko
Ntt Photonics Laboratories Ntt Corporation
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Maeda Narihiko
Institute For Solid State Physics University Of Tokyo
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Hiroki Masanobu
Ntt Photonics Laboratories Ntt Corporation
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Shigekawa Naoteru
Ntt Photonic Lab. Kanagawa Jpn
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Kobayashi Takashi
Department Of Physical Electronics Tokyo Institute Of Technology
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