Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells
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概要
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We discuss the influence of the barrier thickness of an InGaN/GaN multiple quantum well (MQW) structure on solar cell performance. As barrier thickness decreases, short-circuit current density increases and open-circuit voltage decreases. The open-circuit voltage is much lower than expected from the absorption edge because of the large leakage current and large ideality factor of diodes owning to the carrier tunneling through the barrier. An MQW with a 3-nm-thick barrier layer shows a much longer carrier lifetime than that with a 9-nm-thick barrier layer. This is one possible reason for a higher short-circuit current in solar cell with the 3-nm-thick barrier MQW structure than that with the 9-nm-thick barrier MQW.
- 2012-10-25
著者
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WATANABE Noriyuki
NTT Photonics Laboratories
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Shigekawa Naoteru
Ntt Photonic Lab. Kanagawa Jpn
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Yokoyama Haruki
Ntt Photonics Lab. Kanagawa Jpn
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Yamamoto Akio
Graduate School Of Energy Science Kyoto University
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Yamamoto Akio
Graduate School of Engineering, University of Fukui, Fukui 910-8507, Japan
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Sugita Ken-ichi
Graduate School of Engineering, University of Fukui, Fukui 910-8507, Japan
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Watanabe Noriyuki
NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan
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