Low-Turn-on-Voltage Heterojunction Bipolar Transistors with a C-Doped InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition (Special Issue : Solid State Devices and Materials (2))
スポンサーリンク
概要
著者
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SUGIYAMA Hiroki
NTT Photonics Laboratories
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Ida Minoru
Ntt Photonics Laboratories Ntt Corporation
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Yokoyama Haruki
Ntt Photonics Lab. Kanagawa Jpn
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Kurishima Kenji
Ntt Photonics Laboratories Ntt Corporation
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Hoshi Takuya
NTT Photonics Laboratories, Atsugi, Kanagawa 243-0198, Japan
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- Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's Dehydrogenated by an Anneal after Emitter Mesa Formation
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- Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition
- Ultrahigh-Speed InP/InGaAs Double-Heterostructure Bipolar Transistors and Analyses of Their Operation
- Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition
- Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors
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