Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors

概要

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Self-aligned InP/InGaAs heterojunction bipolar transistors (HBTs) were fabricated with emitter electrodes of 1×2, 2×2, 2×5, and 2×20 μm^2 on the same wafer to investigate the influence of lateral scaling on device performance. DC characterization of these devices showed that InP/InGaAs HBTs are less subject to the emitter-size effect than GaAs-based HBTs. Common-emitter current gain β of the smallest 1×2-μm^2 transistor was approximately 60 which is high enough for practical use. High-frequency characteristics of the transistors were almost the same in spite of the large difference in device size. Unity current-gain cutoff frequency f_T of the smallest 1×2-μm^2 transistor was as high as 163 GHz at a collector current of 2.3 mA, which ranks with the f_T=176 GHz achieved by the largest 2×20-μm^2 transistor at a collector current of 45 mA. The smallest device also showed an excellent high-speed performance of f_T≧100 GHz at submilliampere collector currents of I_C≧0.6 mA. The results indicate that small-lateral-dimension InP/InGaAs HBTs are applicable to high-speed ICs with low power dissipation.
社団法人電子情報通信学会の論文
1995-02-25