Continuity-Equation Analysis of Hot Electron Base Transport in InP/InGaAs Heterojunction Bipolar Transistors

概要

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The static and small-signal properties of the hot electron base transport in InP/InGaAs heterojunction bipolar transistors are analyzed theoretically within the framework of the continuity equation. By introducing a probability distribution function for a hot electron in the base, which is a continuous function of position, the nonequilibrium electron transport is integrated into the conventional drift-diffusion theory. The dc analysis of the continuity equation shows that the proposed theory is feasible for the seamless description of ballistic electron transport in thin bases and diffusion-like electron transport in thick bases. In the small-signal ac analysis, an analytic expression for the base transport factor is derived taking into account the hot electron transport. Moreover, a simple expression for the base transit time in the presence of hot electrons is obtained through the analysis of the derived base transport factor. The expression is given as a linear combination of the transit time for ballistic transport of hot electrons and the transit time for diffusive transport of energy-relaxed electrons.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-02-15