Ultrahigh-Speed InP/InGaAs DHBTs with Very High Current Density(<Special Issue>Heterostructure Microelectronics with TWHM2003)
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概要
- 論文の詳細を見る
We describe 150-nm-thick collector InP-based double heterojunction bipolar transistors with two types of thin pseudomorphic bases. The emitter and collector layers are designed for high collector current operation. The collector current blocking is suppressed by the compositionally step-graded collector structure even at J_C of over 500 kA/cm^2 with practical break- down characteristics. An HBT with a 20-nm-thick base achieves a high f_T of 351 GHz at high J_C of 667 kA/cm^2, and a 30-nm-base HBT achieves a high value of 329 GHz for both f_T and f_<max> at J_C of 583 kA/cm2. An equivalent circuit analysis suggests that the extremely small carrier-transit-delay contributes to the ultrahigh f_T.
- 社団法人電子情報通信学会の論文
- 2003-10-01
著者
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IDA Masato
Satellite Venture Business Laboratory. Gunma University
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WATANABE Naoya
Renesas Technology Corp.
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Ida Minoru
Ntt Wireless Systems Laboratories
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WATANABE Noriyuki
NTT Photonics Laboratories
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Ida M
Ntt Photonics Laboratories Ntt Corporation
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IDA Minoru
NTT Photonics Laboratories, NTT Corporation
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KURISHIMA Kenji
NTT Photonics Laboratories, NTT Corporation
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Ida Minoru
Ntt Photonics Laboratories Ntt Corporation
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Kurishima Kenji
Ntt Photonics Laboratories Ntt Corporation
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