Design of a K-Band Power Amplifier Using On-Wafer-Tuning Load-Pull Method(Special Issue on Microwave and Millimeter-Wave Module Technology)

概要

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In high-frequency operation, it is difficult to obtain a large tuning range in load-pull measurement due to losses in the tuning network and RF-probes. In this paper, a low-loss on-wafer-tuning load-pull method is proposed. The output matching network consists of two CPWs connected to a FET output terminal. The impedance of the network can be controlled by changing the effective length of the CPWs by replacing RF-probes and removing air-bridges. To confirm the validity of this load-pull method, a K-band high-efficiency MMIC power amplifier has been designed using the method and fabricated. The amplifier demonstrates performance of 19.5-dBm saturated output power, 12.5-dB linear gain and 49.3% maximum power-added efficiency(PAE)at V_<ds>=3V for 26GHz operation. At 1-dB gain-compression, the PAE is still as high as 44%. This high PAE result clearly indicates that the proposed method is a useful tool for designing power amplifiers, especially those for use in high-frequency(e.g.K-band)operation.
社団法人電子情報通信学会の論文
1998-06-25