Nakajima H | Ntt Photonics Laboratories
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概要
関連著者
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NAKAJIMA Hiroki
NTT Photonics Laboratories
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Nakajima H
Ntt Photonics Laboratories
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Kurishima Kenji
Ntt Photonics Laboratories Ntt Corporation
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Yamahata Shoji
Ntt Photonics Laboratories
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Yamaguchi S
Faculty Of Agriculture University Of Ehime
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Matsuoka Y
Ntt Lsi Lab. Atsugi‐shi Jpn
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KURISHIMA Kenji
NTT LSI Laboratories
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Matsuoka Yutaka
NTT LSI Laboratories
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Matsuoka Yasunobu
Central Research Laboratory Hitachi Ltd.
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YAMAHATA Shoji
NTT LSI Laboratories
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Kobayashi Takashi
NTT LSI Laboratories
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Kobayashi Tetsuro
The Faculty Of Engineering Science Osaka University
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Kobayashi T
Osaka Univ. Toyonaka‐shi Jpn
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Kobayashi T
Faculty Of Engineering Science Osaka University
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Sano Eiichi
Ntt Network Innovation Laboratories
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Ito Hiroki
Development Department Mitsubishi Electric Corporation
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Ito H
Department Of Energy And Environmental Science Graduate School Of Utsunomiya University
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Sano E
Ntt Network Innovation Lab. Yokosuka‐shi Jpn
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KURISHIMA Kenji
NTT Photonics Laboratories, NTT Corporation
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KURISHIMA Kenji
NTT System Electronics Laboratories
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YAMAHATA Shoji
NTT System Electronics Laboratories
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NAKAJIMA Hiroki
NTT System Electronics Laboratories
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ITO Hiroshi
NTT System Electronics Laboratories
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Nakajima Hiroki
NTT Wireless Systems Laboratories
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Nakajima Hiroki
NTT LSI Laboratories
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IDA Masato
Satellite Venture Business Laboratory. Gunma University
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WATANABE Naoya
Renesas Technology Corp.
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Ida Minoru
Ntt Wireless Systems Laboratories
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WATANABE Noriyuki
NTT Photonics Laboratories
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ISHIBASHI Tadao
NTT LSI Laboratories
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Ida M
Ntt Photonics Laboratories Ntt Corporation
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ISHII Yasunobu
NTT System Electronics Laboratories
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IDA Minoru
NTT Photonics Laboratories, NTT Corporation
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YAMANE Yasuro
NTT Photonics Laboratories
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SANO Eiichi
NTT Photonics Laboratories
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Fukai Yoshino
Ntt Lsi Laboratories
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Ida Minoru
Ntt Photonics Laboratories Ntt Corporation
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Ishii Y
Waseda Univ. Tokyo Jpn
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Fukai Y
Ntt System Electronics Lab. Kanagawa Jpn
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Ishii Y
Yamaguchi Univ. Ube‐shi Jpn
著作論文
- DC Characteristics of InP HBTs under High-Temperature and Bias Stress
- High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's Dehydrogenated by an Anneal after Emitter Mesa Formation
- Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's De-Hydrogenated by an Anneal after Emitter Mesa Formation
- Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors
- Effects of a Compositionally-Graded In_xGa_As Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors
- Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors
- Electron Velocity Overshoot Effect in Collector Depletion Layers of InP/InGaAs Heterojunction Bipolar Transistors