ISHIBASHI Tadao | NTT LSI Laboratories

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概要

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著作論文

Influence of Substrate Misorientation on Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors Grown by Metal Organic Chemical Vapor Deposition
Influence of Substrate Misorientation on Carbon Incorporation in GaAs by Metal Organic Chemical Vapor Deposition
Device Figure-of-Merits for High-Speed Digital ICs and Baseband Amplifiers
IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs (Special Issue on Heterostructure Electron Devices)
High-Performance Small-Scale Collector-Up AlGaAs/ GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-lon Implantation (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
InP/InGaAs Heterostructure Bipolar Transistors Grown at Low Temperature by Metalorganic Chemical Vapor Deposition
Electron Velocity Overshoot Effect in Collector Depletion Layers of InP/InGaAs Heterojunction Bipolar Transistors
Influence of Minority Hole Injection on Current Gain Characteristics in AlGaAs/GaAs Heterojunction Bipolar Transistors
Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors
Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded In_xGaAs Layers : Semiconductors and Semiconductor Devices
Electroluminescence of Ballistic and Phonon Emitting Electrorns in the p-Type Base of AlGaAs/GaAs HBT Structures
Thin-Base InGaAs Heterojunction Bipolar Transistor with Parabolically Graded InGaAlAs Emitter
Surface Recombination Velocity in p-Type GaAs
Experimentally Verified Majority and Minority Mobilities in Heavily Doped GaAs for Device Simulations
Gas Source MBE Growth of GaSb
Sn Incorporation in GaAs by Molecular Beam Epitaxy

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