Sn Incorporation in GaAs by Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
The characteristics of heavily Sn-doped GaAs grown by molecular beam epitaxy are investigated. The free carrier concentration saturates at 1×10^<19>cm^<-3> for a growth temperature of 600℃ and at 2×10^<19>cm^<-3> for 400℃. In the saturation region for 600℃, the concentration of incorporated Sn atoms increases with increasing doping concentration. SIMS and electrical characterizations show that the excess Sn atoms are incorporated into GaAs as neutral impurities. The formation of Sn-rich 3D islands does not occur on the GaAs surface at doping concentrations up to around 3×10^<19>cm^<-3> which is much higher than the previously reported critical doping concentration of 1×10^<19>cm^<-3>.
- 社団法人応用物理学会の論文
- 1987-11-20
著者
関連論文
- Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar Transistors
- Influence of Substrate Misorientation on Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors Grown by Metal Organic Chemical Vapor Deposition
- Influence of Substrate Misorientation on Carbon Incorporation in GaAs by Metal Organic Chemical Vapor Deposition
- Low-Temperature Metalorganic Chemical Vapor Deposition Growth of InGaAs for a Non-Alloyed Ohmic Contact to n-GaAs
- Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition
- Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition
- Device Figure-of-Merits for High-Speed Digital ICs and Baseband Amplifiers
- IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs (Special Issue on Heterostructure Electron Devices)
- High-Performance Small-Scale Collector-Up AlGaAs/ GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-lon Implantation (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- Accurate Evaluation of Silicon Planar Doping in InAlAs for InAlAs/InGaAs Modulation Doped Structure Grown by Metal Organic Chemical Vapor Deposition
- InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
- InP/InGaAs Heterostructure Bipolar Transistors Grown at Low Temperature by Metalorganic Chemical Vapor Deposition
- Electron Velocity Overshoot Effect in Collector Depletion Layers of InP/InGaAs Heterojunction Bipolar Transistors
- Influence of Minority Hole Injection on Current Gain Characteristics in AlGaAs/GaAs Heterojunction Bipolar Transistors
- Fabrication of Small AlGaAs/GaAs HBT's for Integrated Circuits Using New Bridged Base Electrode Technology
- Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors
- Current-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors and Its Suppression by Thermal Annealing in As Overpressure
- Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded In_xGaAs Layers : Semiconductors and Semiconductor Devices
- Electroluminescence of Ballistic and Phonon Emitting Electrorns in the p-Type Base of AlGaAs/GaAs HBT Structures
- Influeruce of Dislocations on the Threshold Current Density of AlGaAs/GaAs/InGaAs Strained Quarntum-Well Lasers
- Lattice-Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates
- Thin-Base InGaAs Heterojunction Bipolar Transistor with Parabolically Graded InGaAlAs Emitter
- Surface Recombination Velocity in p-Type GaAs
- Experimentally Verified Majority and Minority Mobilities in Heavily Doped GaAs for Device Simulations
- Gas Source MBE Growth of GaSb
- Sn Incorporation in GaAs by Molecular Beam Epitaxy
- Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition