Surface Recombination Velocity in p-Type GaAs
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概要
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Sufface recombination velocity in p-type GaAs is characterized by using a method which combines minority electron lifetime and photoluminescence measurements. Surface recombination velocities for samples with hole concentrations of 10^<17> cm^<-3> were 4.2×10^6 cm/s and 7.7×10^6 cm/s respectively, which are larger than the previously reported results for n-type GaAs. This difference is attributed to the difference in the thermal velocities between minority electrons and minority holes.
- 社団法人応用物理学会の論文
- 1994-01-15
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