Electroluminescence of Ballistic and Phonon Emitting Electrorns in the p-Type Base of AlGaAs/GaAs HBT Structures
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概要
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We investigate the transport behavior of high-energy ballistic electrons in the p-type region using Npn-Al_xGa_<1-x>As/GaAs heterojunction bipolar transistors (HBT) with an abrupt emitter-base heterojunction. The observed electroluminescence spectra from the base region show several high-energy peaks that are associated with ballistic electrons and with LO-phonon emissions. By varying the emitter-collector voltage, the neutral base width can be modulated, leading to a change in spatial electron distributions and thus determining the mean free paths of ballistic electrons.
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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FURUTA Tomofumi
NTT LSI Laboratories
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ISHIBASHI Tadao
NTT LSI Laboratories
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Fukai Yoshino
Ntt Lsi Laboratories
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