High-Performance Small-Scale Collector-Up AlGaAs/ GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-lon Implantation (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
スポンサーリンク
概要
- 論文の詳細を見る
We report the development of high-performance small-scale AlGaAs/GaAs collector-up heterojunction bipolar transistors (C-up HBT) with a carbon (C)-doped base layer. Oxygen-ion (O^+) implantation is used to define their intrinsic emitter/base junctions and zinc (Zn)-diffusion is used to lower the resistivity of their O^+-implanted extrinsic base layers. The highly resistive O^+-implanted AlGaAs layer in the extrinsic emitter region sufficiently suppresses electron injection even under high-forward-bias conditions, allowing high collector current densities. The use of a C-doped base is especially effective for small-scale C-up HBT's because it suppresses the undesirable turn-on voltage shift caused by base dopant diffusion in the intrinsic area around the collector-mesa perimeter that occurs during the high-temperature Zn-diffusion process after implantation. Even in a small-scale transistor with a 2 μm×2 μm collector, a current gain of 15 is obtained. A microwave transistor with a 2 μm×10 μm collector has a cutoff frequency f_T of 68 GHz and a maximum oscillation frequency f_<max> of 102 GHz. A small-scale C-up HBT with a 2 μm×2 μm collector shows a higher f_<max> of 110 GHz due to reduced base/collector capacitance C_<BC> and its f_<max> remains above 100 GHz, even at a low collector current of 1 mA. The C_<BC> of this device is estimated to be as low as 2.2 fF. Current gain dependence on collector size is also investigated for C-up HBT's and it is found that the base recombination current around the collector-mesa perimeter reduces the current gain.
- 社団法人電子情報通信学会の論文
- 1994-09-25
著者
-
Yamahata Shoji
Ntt Photonics Laboratories
-
Yamahata S
Ntt Photonics Lab. Atsugi‐shi Jpn
-
ISHIBASHI Tadao
NTT LSI Laboratories
-
Yamamoto M
Ntt Electronics Technology Corporation
-
YAMAHATA Shoji
NTT LSI Laboratories
-
Matsuoka Yutaka
NTT LSI Laboratories
-
Ishibashi T
Ntt Photonics Laboratories
-
Yamaguchi S
Faculty Of Agriculture University Of Ehime
関連論文
- 22pZF-5 極紫外FELによる原子・クラスター多重イオン化実験III. : クラスター多重イオン化のレーザー波長・レーザー強度依存性(22pZF 原子・分子,領域1(原子・分子,量子エレクトロニクス,放射線物理))
- 22pZF-4 極紫外FELによる原子・クラスター多重イオン化実験II. : クラスター多重イオン化のサイズ依存性(22pZF 原子・分子,領域1(原子・分子,量子エレクトロニクス,放射線物理))
- 22pZF-3 極紫外FELによる原子・クラスター多重イオン化実験I. : 反跳イオン運動量分光による高次光分布測定(22pZF 原子・分子,領域1(原子・分子,量子エレクトロニクス,放射線物理))
- 軟X線多層膜鏡の形状誤差補正のための大面積イオン銃を用いたミリング装置の開発
- 超高精細バイオイメージング用波面補正軟X線多層膜ミラーの開発
- 傾斜エリプソメトリーによる3次元形状計測 (特集 偏光計測)
- 偏光利用による3次元リアルタイム計測法の開発
- 正反射による物体表面の傾斜エリプソメトリー : 精密実時間形状計測への基本概念
- X線ミラー多層膜 (特集欄 ナノテクノロジーにおけるものづくり) -- (真空中で作製するナノ構造)
- 軟X線多層膜光学
- 水晶振動子を用いたバイブロスキャニング法による非導電体の微細形状計測
- バイブロスキャニング法を用いた微細形状測定システムの開発
- 24aC2 偏光解析法による氷結晶粒界での疑似液体層の検出(結晶成長のその場観察II)
- 圧電センサを用いた共振型バイブロスキャン法の開発
- 軟X線多層膜と応用の現状(EUV基盤技術とその応用の現状)
- 31a-YM-6 Ni薄膜のM吸収端におけるファラデー効果
- バイブロスキャン微細穴形状測定装置の開発
- New Ellipsometric Approach to Critical Dimension Metrology Utilizing Form Birefringence Inherent in a Submicron Line-and-Space Pattern
- 5a-G-1 透過型多層膜を用いた軟X線偏光分光法 I
- 軟 X 線エリプソメトリー
- 軟X線ポラライザーの最前線
- 軟X線多層膜光学素子 -放射光科学への応用-
- 反射波面補正のためにイオンミリングした軟X線多層膜鏡の評価
- 軟X線顕微鏡用精密多層膜ミラーの開発
- 昭和 60 年度プラズマ研究所共同研究会「真空紫外・軟 X 線領域での測光機器較正法の研究」プログラム
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
- Carbon Doping in AlGaAs Using Trimethylarsine by Metalorganic Chemical Vapor Deposition with a High-Speed Rotating Susceptor
- Influence of Substrate Misorientation on Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors Grown by Metal Organic Chemical Vapor Deposition
- Influence of Substrate Misorientation on Carbon Incorporation in GaAs by Metal Organic Chemical Vapor Deposition
- KrFエキシマレーザ露光装置用TTLアライメント系の開発
- 放電加工による微細穴加工および微細ポンチの成形(形状創成の高精度化)
- 軟 X 線用偏光子
- High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Ultra-Fast Optoelectronic Decision Circuit Using Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode (Special Issue on Integrated Electronics and New System Paradigms)
- A Large Output Voltage Swing of a Resonant Tunneling Flip-Flop Circuit Employing a Monostable-Bistable Transition Logic Element (MOBILE)
- A Novel Delayed Flip-Flop Circuit Using Resonant Tunneling Logic Gates
- High-Speed Static Frequency Divider Employing Resonant Tunneling Diodes and HEMTs
- High-Speed and Low-Power D-FF Employing MOBILEs : Monostable-Bistable Transition Logic Elements
- A Multilayered Piezoelectric Transformer Operating in the Third Order Longitudinal Mode and Its Application for an Inverter
- High-Power Characteristics of Multilayer Piezoelectric Ceramic Transducers
- Small Multilayer Piezoelectric Transformers with High Power Density : Characteristics of Second and Third-Mode Rosen-Type Transformers
- Low-Frequency Sound Source with Dual Bending Radiation Surfaces
- Investigation of Disk Bender Low-Frequency Projector with Dual Radiation Surfaces
- Monolithic integration of UTC-PDs and InP HBTs using Be ion implantation
- Highly Reliable Submicron InP-Based HBTs with over 300-GHz f_t
- High-performance and reliable InP/InGaAs HBTs operating at high current density (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High-performance and reliable InP/InGaAs HBTs operating at high current density (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's Dehydrogenated by an Anneal after Emitter Mesa Formation
- Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's De-Hydrogenated by an Anneal after Emitter Mesa Formation
- Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition
- Ultrahigh-Speed InP/InGaAs Double-Heterostructure Bipolar Transistors and Analyses of Their Operation
- Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition
- Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors
- Effects of a Compositionally-Graded In_xGa_As Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors
- Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Logic Gate Monolithically Integrating Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode
- Device Figure-of-Merits for High-Speed Digital ICs and Baseband Amplifiers
- IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs (Special Issue on Heterostructure Electron Devices)
- High-Performance Small-Scale Collector-Up AlGaAs/ GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-lon Implantation (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- 軟X線用多層膜ミラーの設計・製作・評価(X線光学)
- 60-GHz Monolithic Photonic Millimeter-Wave Emitter for Fiber-Radio Applications
- Wavelength-Multiplexed Holographic Recording in Cerium Doped Strontium Barium Niobate by Using Tunable Laser Diode
- High-Density Optical Storage with Multiplexed Holographic Recording Method
- Quantum Efficiency of InP/InGaAs Uni-Traveling-Carrier Photodiodes at 1.55-1.7 μm Measured Using Supercontinuum Generation in Optical Fiber
- Quantum Efficiency of InP/InGaAs Uni-Traveling-Carrier Photodiodes at 1.55-1.7um Measured Using Supercontinuum Generation in Optical Fiber
- InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
- InP/InGaAs Heterostructure Bipolar Transistors Grown at Low Temperature by Metalorganic Chemical Vapor Deposition
- Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
- Electron Velocity Overshoot Effect in Collector Depletion Layers of InP/InGaAs Heterojunction Bipolar Transistors
- InP/InGaAs Uni-Traveling-Carrier Photodiodes(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- Layered-Oxide-Isolation (LOXI) Metal-Semiconductor Field Effect Transistor (MESFET) for Low Parasitic Source-Drain Capacitance
- Crosstalk-Suppressed Readout System Using Shading Band
- Three-Track Readout Method Using Two Offset Beams
- Influence of Minority Hole Injection on Current Gain Characteristics in AlGaAs/GaAs Heterojunction Bipolar Transistors
- Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors
- Temperature Dependence of the Phase Coherence Length of High-Mobility AlGaAs/GaAs Quantum-Wire Rings
- Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded In_xGaAs Layers : Semiconductors and Semiconductor Devices
- Electroluminescence of Ballistic and Phonon Emitting Electrorns in the p-Type Base of AlGaAs/GaAs HBT Structures
- Thin-Base InGaAs Heterojunction Bipolar Transistor with Parabolically Graded InGaAlAs Emitter
- High-Speed Uni-Traveling-Carrier Photodiodes Monolithically Integrated with InP Heterojunction Bipolar Transistors using Be Ion Implantation
- Highly Uniform Regrown In_Ga_As/AlAs/InAs Resonant Tunneling Diodes on In_Ga_As
- Uniformity of the High Electron Mobility Transistors and Resonant Tunneling Diodes Integrated on an InP Substrate Using an Epitaxial Structure Grown by Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition
- Crucial Role of Extremely Thin AlSb Barrier Layers in InAs/AlSb/GaSb/AlSb/InAs Resonant Interband Tunneling Diodes
- Dependence of Resonant Interband Tunneling Current on Barrier and Well Width in InAs/AlSb/GaSb/AlSb/InAs Double-Barrier Structures
- Surface Recombination Velocity in p-Type GaAs
- Experimentally Verified Majority and Minority Mobilities in Heavily Doped GaAs for Device Simulations
- Conductance Oscillations in a Quantum Wire with a Stub Structure due to Quantum Interference
- Gas Source MBE Growth of GaSb
- 軟X線用多層膜の形成とその利用
- 偏光解析法(エリプソメトリ-) (表面の評価技術) -- (表面状態評価法)
- 氷結晶表面における疑似液体層の存在と結晶のモルフォロジー : モルフォロジーIII
- 4a-I-8 偏光解析法による氷表面の疑似液体層の研究
- 偏光解析法による氷表面の疑似液体層の研究 : 厚さの温度依存性と方位依存性
- 回転素子型エリプソメ-タ-とその調整(最近の技術から)
- Sn Incorporation in GaAs by Molecular Beam Epitaxy
- Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition