Dependence of Resonant Interband Tunneling Current on Barrier and Well Width in InAs/AlSb/GaSb/AlSb/InAs Double-Barrier Structures

概要

論文の詳細を見る
Dependence of the peak current densities (I_p) on AlSb barrier and GaSb well widths (L_b and L_W) in InAs/AlSb/GaSb/AlSb/InAs double-barrier resonant interband tunneling diodes was systematically investigated. We found that I_P increases exponentially and reaches 7.5×10^4' A/cm^2, which is the highest value ever reported, as L_b decreases from 7 to 3 ML. We also found that I_P increases monotonically as L_W decreases from 46 to 10 ML. When L_W is less than 10 ML however I_P decreases with the decrease in L_W and thus has a maximum value for L_W of 10 ML. This behavior can be explained well in terms of one dominant resonance level. Agreement between the behaviors of the dominant resonance level and the calculated energy level for the ground state of light holes in the well indicates that I_P is mainly dominated by interband tunneling through the ground state of light holes.
社団法人応用物理学会の論文
1997-03-30