Waho Takao | Ntt System Electronics Laboratories
スポンサーリンク
概要
関連著者
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Waho Takao
Ntt System Electronics Laboratories
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Yamamoto Masafumi
Ntt System Electronics Laboratories
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Yamamoto M
Ntt Electronics Technology Corporation
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Waho T
Ntt System Electronics Laboratories
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Kitabayashi Hiroto
Ntt System Electronics Laboratories
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SHIMIZU Naofumi
NTT System Electronics Laboratories
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ISHIBASHI Tadao
NTT System Electronics Laboratories
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Yamamoto M
Osaka Univ. Suita‐shi Jpn
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Maezawa Koichi
Ntt System Electronics Laboratories:(present) Faculty Of Engineering Nagoya University
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Chen Kevin
Ntt System Electronics Laboratories:(present Address)department Of Electronic Engineering City Unive
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Waho T
Ntt System Electronics Lab. Kanagawa Jpn
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Waho T
Sophia Univ. Tokyo Jpn
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FUKUYAMA Hiroyuki
NTT System Electronics Laboratories
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Waho T
Department Of Electrical And Electronics Engineering Sophia University
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ITOH Toshihiro
NTT System Electronics Laboratories
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Yuda M
Yonago National Coll. Technol. Tottori
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Maezawa K
Graduate School Of Science And Engineering University Of Toyama
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Maezawa Koichi
Ntt System Electronics Laboratories:(present Address) Faculty Of Engineering Nagoya University
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Yamamoto Miki
The Faculty Of Engineering Osaka University
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Maezawa Koichi
Ntt System Electronics Laboratories
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Maezawa Koichi
Univ. Of Toyama Toyama‐shi Jpn
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Fukuyama Hiroyuki
NTT System Electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan
著作論文
- A Novel Functional Logic Circuit Using Resonant-Tunneling Devices for Multiple-Valued Logic Applications
- 10-GHz Operation of Multiple-Valued Quantizers Using Resonant-Tunneling Devices (Special Issue on Multiple-Valued Logic and Its Applications)
- Capacitance Anomaly in the Negative Differential Resistance Region of Resonant Tunneling Diodes
- Crucial Role of Extremely Thin AlSb Barrier Layers in InAs/AlSb/GaSb/AlSb/InAs Resonant Interband Tunneling Diodes
- Dependence of Resonant Interband Tunneling Current on Barrier and Well Width in InAs/AlSb/GaSb/AlSb/InAs Double-Barrier Structures
- Tunneling Current through Si Donor Level in GaAs/AlAs Single-Barrier Diodes