Capacitance Anomaly in the Negative Differential Resistance Region of Resonant Tunneling Diodes
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概要
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For In_<0.53>Ga_0.47>AS/AIAs resonant tunneling diodes, the peak structure in the capacitance-voltage (C-V) characteristics in the negative differential resistance (NDR) region was investigated. We experimentally reveal that the electron sheet density that is responsible for the capacitance peak is equal to half of that in the quantum well at the peak voltage. The derived electron sheet density in the quantum well at the peak current is 3.2 × 10^11 cm^-2 and the resulting electron lifetimes in the quantum well are 320 and 58O fs for 2.0- and 2.3-nm AIAs barriers.
- 社団法人応用物理学会の論文
- 1997-03-15
著者
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SHIMIZU Naofumi
NTT System Electronics Laboratories
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ISHIBASHI Tadao
NTT System Electronics Laboratories
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Waho Takao
Ntt System Electronics Laboratories
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