Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
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概要
- 論文の詳細を見る
We have studied the ultrafast response of uni-traveling-carrier photodiodes with photo-absorption layer doping levels from 2.5 ×1017 to 2.5 ×1018 cm-3. It is found that 3-dB band width increases with the output voltage in the low output region. This enhancement is more prominent for a lower doping level in the photo-absorption layer. From the analysis of the carrier transport in the photo-absorption layer, we attribute the observed enhanced bandwidth as a result of the self-induced electric field associated with carrier injection.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1998-03-30
著者
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SHIMIZU Naofumi
NTT System Electronics Laboratories
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WATANABE Noriyuki
NTT System Electronics Laboratories
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FURUTA Tomofumi
NTT System Elecrronics Laboratories
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ISHIBASHI Tadao
NTT System Electronics Laboratories
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Ishibashi Tadao
NTT System Electronics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi 243-0198, Japan
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