Scanning Tunneling Microscopy of Cleaved Si and GaAs Surfaces in Air
スポンサーリンク
概要
- 論文の詳細を見る
Microstructures on cleaved Si and GaAs surfaces were directly observed in air by scanning tunneling microscopy (STM). Although an atom-resolved image of surface structures was not obtained, microstructures 15-40 nm in size and 1-30 nm in height were imaged. The comparison between STM and SEM images indicated that STM images reflect the microstructures on cleaved Si and GaAs surfaces. These results revealed that STM measurements are applicable to the characterization of semiconductor surface structures even in air.
- 社団法人応用物理学会の論文
- 1989-02-20
著者
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FURUTA Tomofumi
NTT LSI Laboratories
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KURIYAMA Yoichi
NTT Atsugi Electrical Communications Laboratories
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TANIMOTO Masafumi
NTT LSI Laboratories
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KURIYAMA Youichi
NTT LSI Laboratories
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