Proximity Effect Correction for X-Ray Mask Fabrication
スポンサーリンク
概要
- 論文の詳細を見る
Our conventional proximity effect correction program has been improved to fabricate X-ray masks in a subtractive process. The improved program calculates a correction dose for each exposure pattern, using an offset energymap. Two partitioning steps related to delineation and mesh boundary are introduced to improve the correctionaccuracy. The mesh size for calculating the offset energy map is determined to be 0.2 μm at 30 kV to maintain the error in the dose calculation within 4%. Using this program, 0.2-μm-level LSI patterns can be fabricated even at comparatively low acceleration voltage of 30 kV.
- 社団法人応用物理学会の論文
- 1994-12-30
著者
-
SHIMAZU Nobuo
NTT LSI Laboratories
-
UCHIYAMA Shingo
NTT LSI Laboratories
-
MORIYA Shigeru
NTT LSI Laboratories
-
KURIYAMA Youichi
NTT LSI Laboratories
関連論文
- A Beam Drift Reduction Device for the X-Ray Mask E-Beam Writer, EB-X2
- Basic Characteristics of Beam Position Drift and Field Stitching Error Caused by Electron Beam Column Charging
- Improving X-Ray Mask Pattern Placement Accuracy by Correcting Process Distortion in Electron Beam Writing
- A 100 kV Electron Gun for the X-Ray Mask Writer, EB-X2
- An Approach to a High-Throughput E-Beam Writer with a Single-Gun Multiple-Path System
- Simulation of X-Ray Mask Pattern Displacement
- A New Proximity Parameter Evaluation Method Utilizing Auxiliary Patterns for Dose Compensation
- Application of Mark Detection Using the Vibration Method to an Electron Beam Exposure System
- Modification of E-Beam Latent Images in Negative Resist by Exposure to Monochromatic Deep UV Flood Light
- Proximity Effect Correction for X-Ray Mask Fabrication
- Scanning Tunneling Microscopy of Cleaved Si and GaAs Surfaces in Air