Modification of E-Beam Latent Images in Negative Resist by Exposure to Monochromatic Deep UV Flood Light
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概要
- 論文の詳細を見る
1.7-μm-thick SAL601 single-layer resist was post-exposed to monochromatic deep UV flood light after e-beam delineation to enhance its resolution. Substantially improved pattern shape and pattern size controllability were obtained by exposing the resist to 254- and 248-nm light where SAL601 has absorption coefficients of 0.46 and 0.88 μm^<-1>, respectively. Monte Carlo simulation of the deposition energy profile indicates that the incident light reaches considerable depth in the resist and modifies the whole preexisting latent image formed by e-beam delineation.
- 社団法人応用物理学会の論文
- 1991-12-15
著者
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Ban H
Ntt Advanced Technol. Corp. Atsugi‐shi Jpn
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NAKAMURA Jiro
NTT Telecommunications Energy Laboratories
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Nakamura Junko
Central Research Laboratory Hitachi Ltd.
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Tanaka A
Department Of Applied Science For Electronics And Materials Graduate School Of Engineering Science
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Nakamura J
Hokkaido Univ. Sapporo Jpn
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TANAKA Akinobu
NTT LSI Laboratories
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Nakamura Jiro
NTT LSI Laboratories
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Ban Hiroshi
NTT LSI Laboratories
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MORIYA Shigeru
NTT LSI Laboratories
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Nakamura Junichi
Department Of Electronics Faculty Of Engineering Himeji Institute Of Technology
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