Effect of Acid Diffusion on Resolution of a Chemically Amplified Resist in X-Ray Lithography
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概要
- 論文の詳細を見る
The diffusion range of acids in a chemically amplified positive resist (EXP) was quantitatively evaluated using a contact replication method. The acid diffusion range reached a maximum depth of 0.4 μm. The acid diffusion range was diminished, as the temperature of prebaking was raised or the temperature of post-exposure baking (PEB) was reduced. The acid diffusion range also exerted a great influence on changing the replicated pattern width dependence on exposure dose. To clarify the effect of the acid diffusion on the characteristics of the resist, the distribution of the acid-catalyzed reaction in the resist and the acid diffusion range were calculated using the diffusion coefficient of the acid and the acid-catalyzed reaction rate constant determined by experiments. The calculated acid diffusion range coincided rather well with that obtained by the contact replication method.
- 社団法人応用物理学会の論文
- 1991-10-15
著者
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Ban H
Ntt Advanced Technol. Corp. Atsugi‐shi Jpn
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NAKAMURA Jiro
NTT Telecommunications Energy Laboratories
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Nakamura Junko
Central Research Laboratory Hitachi Ltd.
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Tanaka A
Department Of Applied Science For Electronics And Materials Graduate School Of Engineering Science
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DEGUCHI Kimiyoshi
NTT LSI Laboratories
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Nakamura J
Hokkaido Univ. Sapporo Jpn
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TANAKA Akinobu
NTT LSI Laboratories
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Nakamura Jiro
NTT LSI Laboratories
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Ban Hiroshi
NTT LSI Laboratories
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Deguchi K
Department Of Electronics And Information Systems Osaka University
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Nakamura Junichi
Department Of Electronics Faculty Of Engineering Himeji Institute Of Technology
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