Alkali-Developable Silicone-Based Negative Photoresist (SNP) for Deep UV, Electron Beam, and X-Ray Lithographies
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概要
- 論文の詳細を見る
A new silicone-based negative photoresist (SNP) developable with alkaline aqueous solutions is prepared. SNP cormposed of acetylated phenylsilsesquioxane oligomer and azidopyrene is applied to deep UV, electron beam (EB), and Xray lithographies. SNP slightly swells in alkaline developers, thus exhibiting exceptionally high resolution characteristics for a negative resist. The resistance of SNP to oxygen reactive ion etching is approximately 30 times greater than that ofconventional novolac resists.
- 社団法人応用物理学会の論文
- 1989-10-20
著者
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KAWAI Yoshio
NTT LSI Laboratories
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Ban H
Ntt Advanced Technol. Corp. Atsugi‐shi Jpn
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Tanaka A
Department Of Applied Science For Electronics And Materials Graduate School Of Engineering Science
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河合 良信
Kyushu Univ. Fukuoka
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DEGUCHI Kimiyoshi
NTT LSI Laboratories
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TANAKA Akinobu
NTT LSI Laboratories
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Ban Hiroshi
NTT LSI Laboratories
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Deguchi K
Department Of Electronics And Information Systems Osaka University
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