Pattern Fabrication of Chemically Amplified Resist on an Interdigitated Array Electrode

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概要

• 論文の詳細を見る

• The patterning of the chemically amplified resist SAL601 on an interdigitated array electrode (IDA) has been carried out. When direct current is applied to resist films during the post-exposure baking process, the resist sensitivity is low near the edge of the cathode on the IDA and there is a semicircular cavity in a cross-sectional-developed pattern. It is considered that catalytic protons generated during exposure reduce, becoming electrically neutral on the cathode surface and losing-their catalytic ability for crosslinking reactions. From the size of the cavity, the acid diffusion coefficient can be roughly estimated to be 70 nm^2/s.

• 社団法人応用物理学会の論文
• 1993-06-01

著者

• Morita M

  Advanced Materials & Technology Research Laboratories Nippon Steel Corporation

• Ban H

  Ntt Advanced Technol. Corp. Atsugi‐shi Jpn

• NAKAMURA Jiro

  NTT Telecommunications Energy Laboratories

• MORITA Masao

  NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation

• Nakamura Junko

  Central Research Laboratory Hitachi Ltd.

• Tanaka A

  Department Of Applied Science For Electronics And Materials Graduate School Of Engineering Science

• Morita Masao

  Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation

• Nakamura J

  Hokkaido Univ. Sapporo Jpn

• TANAKA Akinobu

  NTT LSI Laboratories

• Nakamura Jiro

  NTT LSI Laboratories

• Ban Hiroshi

  NTT LSI Laboratories

• Morita Masao

  Ntt Basic Research Laboratories

• Nakamura Junichi

  Department Of Electronics Faculty Of Engineering Himeji Institute Of Technology

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